10
LTC1693
corresponding to MOSFET’s V
GS
value (V
CC
in this case)
can be readily obtained from the manafacturer’s Q
GS
vs
V
GS
curves:
Load Capacitive Power (MOS) = (V
CC
)(Q
G
)(f)
Transition state power losses are due to both AC currents
required to charge and discharge the drivers’ internal
nodal capacitances and cross-conduction currents in the
internal gates.
UVLO and Thermal Shutdown
The LTC1693’s UVLO detector disables the input buffer
and pulls the output pin to ground if V
CC
< 4V. The output
remains off from V
CC
= 1V to V
CC
= 4V. This ensures that
during start-up or improper supply voltage values, the
LTC1693 will keep the output power MOSFET off.
The LTC1693 also has a thermal detector that similarly
disables the input buffer and grounds the output pin if
junction temperature exceeds 145°C. The thermal shut-
down circuit has 20°C of hysteresis. This thermal limit
helps to shut down the system should a fault condition
occur.
Input Voltage Range
LTC1693’s input pin is a high impedance node and essen-
tially draws neligible input current. This simplifies the
input drive circuitry required for the input.
The LTC1693 typically has 1.2V of hysteresis between its
low and high input thresholds. This increases the driver’s
robustness against any ground bounce noises. However,
care should still be taken to keep this pin from any noise
pickup, especially in high frequency switching
applications.
In applications where the input signal swings below the
GND pin potential, the input pin voltage must be clamped
to prevent the LTC1693’s parastic substrate diode from
turning on. This can be accomplished by connecting a
series current limiting resistor R1 and a shunting Schottky
diode D1 to the input pin (Figure 4). R1 ranges from 100
to 470 while D1 can be a BAT54 or 1N5818/9.
V
CC
IN
R1
D1
GND
LTC1693
INPUT SIGNAL
GOING BEL0W
GND PIN
POTENTIAL
PARASITIC
SUBSTRATE
DIODE
1693 F04
Bypassing and Grounding
LTC1693 requires proper V
CC
bypassing and grounding due
to its high speed switching (ns) and large AC currents (A).
Careless component placement and PCB trace routing may
cause excessive ringing and under/overshoot.
To obtain the optimum performance from the LTC1693:
A. Mount the bypass capacitors as close as possible to the
V
CC
and GND pins. The leads should be shortened as
much as possible to reduce lead inductance. It is
recommended to have a 0.1µF ceramic in parallel with
a low ESR 4.7µF bypass capacitor.
For high voltage switching in an inductive environment,
ensure that the bypass capacitors’ V
MAX
ratings are
high enough to prevent breakdown. This is especially
important for floating driver applications.
B. Use a low inductance, low impedance ground plane to
reduce any ground drop and stray capacitance. Re-
member that the LTC1693 switches 1.5A peak currents
and any significant ground drop will degrade signal
integrity.
C. Plan the ground routing carefully. Know where the large
load switching current is coming from and going to.
Maintain separate ground return paths for the input pin
and output pin. Terminate these two ground traces only
at the GND pin of the driver (STAR network).
D. Keep the copper trace between the driver output pin and
the load short and wide.
Figure 4
APPLICATIONS INFORMATION
WUU
U
11
LTC1693
TYPICAL APPLICATIONS
U
TDRIVE
PWR V
IN
PINV
BINH
V
IN
C
T
I
TH
SENSE
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
BDRIVE
PGND
LB
OUT
LB
IN
SGND
SHDN
V
FB
SENSE
+
U2
LTC1266A
IN1
GND1
IN2
GND2
8
7
6
5
1
2
3
4
V
CC1
OUT1
V
CC2
OUT2
U1
LTC1693-2
C5
1nF
C6
1nF
50V
C10
0.1µF
50V
C13
10nF
100V
C11
0.1µF
100V
C12
0.1µF
X7R
T1A
9.2µH
9T 4× #26
T1B
123µH
33T #30
T1C
33T #30
T1D
33T #30
T1E
NOT
USED
1
10
3
2
6
7
8
9
4
5
C12
1nF
5%
C7
0.1µF
25V
C
IN2
330µF
6.3V
+V1
V
IN
5V
GND
C4
0.1µF
C11
120pF
5%
NPO
R4
43k
R1
10k
R
F1
2.49k
1%
R3
0.010
R5
100
R7
1k
5%
R9
4.99k
70V
200mA
24V
240mA
GND
R10
32k
1%
C
A1
220µF
35V
D4
MBR1100
L1
100µH
D6
12V
500mW
R8
10k
1%
R
F4
46.4k
0.1%
R
F3
24.3k
0.1%
R2
100
Q1
IRL2505
Q3
MTD2N20
R
X1
24
1/2W
+
C
IN1
330µF
6.3V
+
C1
100pF
C2
0.33µF
C8
0.1µF
16V
C9
10nF
50V
C3
0.1µF
D2
MMSD4148
D3
MMSD4148
+V
IN
••
C
B1
120µF
63V
+
C
B2
120µF
63V
T1: PHILIPS EFD25-3C85
FIRST WIND T1B, T1C AND T1D TRIFILAR
SECOND WIND T1A QUADFILAR
AIR GAP: 0.88mm OR 2 × 0.44mm SPACERS
+
C
B3
39µF
100V
+
+
2
1
8
7
3
4
6
U4
LT1006S8
+
C
A2
220µF
35V
+
C
A3
220µF
35V
+
D5
MUR120
1693 TA03
+
2
24V
1
8
7
3
4
6
U3
LT1006S8
R6
1.2k
R
F2
47.5k
1%
SLIC Power Supply
12
LTC1693
TYPICAL APPLICATIONS
U
I
TH
SGND PGND
LBO
SHDN
LBI
BDRV
TDRV
C
T
7121510
V
IN
C9
0.015µF
C8
1500pF
C10
220pF
C7
390pF
C5
0.1µF
C6
10µF
16V
R7
1k
R8
30.1k
BINH
PINV
PWR V
IN
1
9
C4
1000pF
8
16
13
11
14
2
V
IN
–5V
V
OUT
3.3V
6A
3
4
5
6
SENSE
U1
LTC1266
SENSE
V
FB
R6
10
R5
2.2
R4
2.2
R1
0.015
1W
V
S
R3
100
R11
100k
Q5
2N3906
PANASONIC ETQPAF4R8HA
COILCRAFT DO3316P-102
3.3V
V
S
1693 TA03
R17
6.81k
Q4
2N3906
*
**
Q3
2N7002
R10
100k
R15
1.2k
C16
10µF
16V
R14
51
C15
0.1µF
U2A
LTC1693-2
Q2
Si4420
×2
Q1
Si4420
×2
17
8
2
U2B
LTC1693-2
35
6
4
Q6
2N3904
R19
1k
R13
1.30k
R12
4.75k
R9
13k
R16
3.6k
D5
MBRO530
D3
MBRO530
D1
MBRS130
C17
100pF
R18
6.81k
+
C1
330µF
6.3V
×5
+
C2
330µF
6.3V
×5
+
D2
MBRO530
D4
MBRO530
+
C14
10µF
16V
+
C12
4700pF
C11
4700pF
L1*
4.8µH
C13
0.1µF
L2**
1µH
R2
0.015
1W
C3
330µF
6.3V
×2
+
Negative-to-Positive Synchronous Boost Converter

LTC1693-3CMS8#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers High Speed MOSFET Driver
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union