IS61WV51232BLL-10BLI Datasheet IS61WV51232BLL-10BLI, IS61WV51232BLL-10BLI-TR | P1-P3

Integrated Silicon Solution, Inc. — www.issi.com 1

Rev. A

06/01/2016

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest

version of this device speciﬁcation before relying on any published information and before placing orders for products.

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unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

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IS61WV51232ALL/ALS

IS61WV51232BLL/BLS

IS64WV51232BLL/BLS

512K x 32 HIGH-SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

JUNE 2016

FEATURES

• High-speedaccesstimes:

8, 10, 20 ns

• High-performance,low-powerCMOSprocess

• Multiplecenterpowerandgroundpinsforgreater

noise immunity

• EasymemoryexpansionwithCE and OE options

• CE power-down

• Fullystaticoperation:noclockorrefresh

required

• TTLcompatibleinputsandoutputs

• Singlepowersupply

Vdd 1.65V to 2.2V (IS61WV51232Axx)

speed = 20ns for Vdd 1.65V to 2.2V

Vdd 2.4V to 3.6V (IS61/64WV51232Bxx)

speed = 10ns for Vdd 2.4V to 3.6V

speed = 8ns for Vdd 3.3V + 5%

• Packagesavailable:

–

90-ball miniBGA (8mm x 13mm)

• IndustrialandAutomotiveTemperatureSupport

• Lead-freeavailable

FUNCTIONAL BLOCK DIAGRAM

DESCRIPTION

TheISSI IS61WV51232Axx/Bxx and IS64WV51232Bxx are

high-speed,16M-bitstaticRAMsorganizedas512Kwords

by 32 bits. It is fabricated using ISSI's high-performance

CMOS technology.This highly reliableprocess coupled

with innovative circuit design techniques, yields high-

performance and low power consumption devices.

When CE is HIGH (deselected), the deviceassumes a

standby mode at which the power dissipation can be re-

duceddownwithCMOSinputlevels.

EasymemoryexpansionisprovidedbyusingChipEnable

andOutputEnableinputs,CE and OE.TheactiveLOW

Write Enable(WE) controls both writing and reading of

the memory.

Thedeviceispackagedinthe JEDECstandard 90-ball

BGA (8mm x 13mm).

A0-A18

512K x 32

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

VSS

VDD

I/O

DATA

CIRCUIT

DQa-d

BWa-d

CE2

2 Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

06/01/2016

IS61WV51232ALL/ALS

IS61WV51232BLL/BLS

IS64WV51232BLL/BLS

PIN CONFIGURATION

PACKAGECODE:

B90BALLFBGA(TopView)(8.00mmx13.00mmBody,0.8mmBallPitch)

1 2 3 4 5 6 7 8 9

DQ1

DQ2

VSS

VDD

VSS

A15

CE2

BWb

VDD

VSS

DQ13

DQ14

DQ0

VDD

DQ3

DQ6

DQ7

BWa

A14

A17

DQ8

DQ9

DQ12

VDD

DQ15

VSS

DQ4

DQ5

A13

A16

A18

VSS

DQ10

DQ11

VSS

VDD

DQ27

DQ26

A10

VDD

DQ21

DQ20

VDD

DQ31

VSS

DQ28

DQ25

DQ24

BWd

A12

DQ23

DQ22

DQ19

VSS

DQ16

DQ30

DQ29

VDD

VSS

VDD

A11

BWc

VSS

VDD

DQ18

DQ17

PIN DESCRIPTIONS

A0-A18 Address Inputs

DQx DataI/O

CE,CE2ChipEnableInput

OE OutputEnableInput

WE WriteEnableInput

BWx (x=a-d) Byte Write Control

Vdd Power

Vss Ground

NC No Connection

Integrated Silicon Solution, Inc. — www.issi.com 3

Rev. A

06/01/2016

IS61WV51232ALL/ALS

IS61WV51232BLL/BLS

IS64WV51232BLL/BLS

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Parameter Value Unit

Vterm TerminalVoltagewithRespecttoGND –0.5toVdd + 0.5 V

Vdd VddRelatestoGND –0.3to4.0 V

tstg StorageTemperature –65to+150 °C

Pt PowerDissipation 1.0 W

Notes:

1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamageto

thedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditions

abovethoseindicatedintheoperationalsectionsofthisspecicationisnotimplied.Exposuretoabsolute

maximum rating conditions for extended periods may affect reliability.

CAPACITANCE

(1,2)

Symbol Parameter Conditions Max. Unit

Cin Input Capacitance Vin = 0V 6 pF

i/O

 Input/OutputCapacitance VOut = 0V 8 pF

Notes:

1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.

2. Testconditions:T

a = 25°C, f=1MHz,Vdd = 3.3V.

TRUTH TABLE

CE CE2 OE WE BWa BWb BWc BWd DQ0-7 DQ8-15 DQ16-23 DQ24-31 Mode Power

 H X X X X X X X High-Z High-Z High-Z High-Z PowerDown (Isb)

 X L X X X X X X High-Z High-Z High-Z High-Z PowerDown (Isb)

 L H L H L L L L DataOut DataOut DataOut DataOut ReadAllBits (ICC)

 L H L H L H H H DataOut High-Z High-Z High-Z ReadBytea (ICC)