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IS61WV51232BLL-10BLI

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
4 Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
06/01/2016
IS61WV51232ALL/ALS
IS61WV51232BLL/BLS
IS64WV51232BLL/BLS
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 2.4V-3.6V
Symbol Parameter Test Conditions Min. Max. Unit
VOh OutputHIGHVoltage Vdd = Min.,iOh = –1.0 mA 1.8 — V
VOl OutputLOWVoltage Vdd = Min.,iOl = 1.0 mA — 0.4 V
Vih InputHIGHVoltage 2.0 Vdd + 0.3 V
Vil InputLOWVoltage
(1)
–0.3 0.8 V
ili InputLeakage GND≤ Vin ≤ Vdd
–1 1 µA
ilO OutputLeakage
GND≤ VOut ≤ Vdd, OutputsDisabled –1 1 µA
Note:
1.
Vil (min.) = –0.3VDC;Vil (min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V dC; Vih (max.) = Vdd + 2.0V aC (pulse width 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 3.3V + 5%
Symbol Parameter Test Conditions Min. Max. Unit
VOh OutputHIGHVoltage Vdd = Min.,iOh = –4.0 mA 2.4 — V
VOl OutputLOWVoltage Vdd = Min.,iOl = 8.0 mA — 0.4 V
Vih InputHIGHVoltage 2 Vdd + 0.3 V
Vil InputLOWVoltage
(1)
–0.3 0.8 V
ili InputLeakage GND≤ Vin ≤ Vdd
–1 1 µA
ilO OutputLeakage
GND≤ VOut ≤ Vdd, OutputsDisabled –1 1 µA
Note:
1.
Vil (min.) = –0.3VDC;Vil (min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V dC; Vih (max.) = Vdd + 2.0V aC (pulse width 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 1.65V-2.2V
Symbol Parameter Test Conditions VDD Min. Max. Unit
VOh OutputHIGHVoltage iOh = -0.1 mA 1.65-2.2V 1.4 — V
VOl OutputLOWVoltage iOl = 0.1 mA 1.65-2.2V — 0.2 V
Vih InputHIGHVoltage 1.65-2.2V 1.4 Vdd + 0.2 V
Vil
(1)
InputLOWVoltage
1.65-2.2V –0.2 0.4 V
ili InputLeakage GND≤ Vin ≤ Vdd
–1 1 µA
ilO OutputLeakage
GND≤ VOut ≤ Vdd, OutputsDisabled –1 1 µA
Notes:
1.
Vil (min.) = –0.3V dC; Vil (min.) = –2.0V AC (pulse width -2.0ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V dC; Vih (max.) = Vdd + 2.0V AC (pulse width -2.0ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com 5
Rev. A
06/01/2016
IS61WV51232ALL/ALS
IS61WV51232BLL/BLS
IS64WV51232BLL/BLS
OPERATING RANGE (VDD) (IS61WV51232BLL)
(1)
Range Ambient Temperature VDD (8 nS)
1
VDD (10 nS)
1
Commercial 0°Cto+70°C 3.3V+ 5% 2.4V-3.6V
Industrial –40°Cto+85°C 3.3V+ 5% 2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of 3.3V + 5%,
the device meets 8ns.
OPERATING RANGE (VDD) (IS64WV51232BLL)
Range Ambient Temperature VDD (10 nS)
Automotive –40°Cto+125°C 2.4V-3.6V
HIGH SPEED
OPERATING RANGE (VDD) (IS61WV51232ALL)
Range Ambient Temperature VDD Speed
Commercial 0°Cto+70°C 1.65V-2.2V 20ns
Industrial –40°Cto+85°C 1.65V-2.2V 20ns
Automotive –40°Cto+125°C 1.65V-2.2V 20ns
POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
-8 -10 -20
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
iCC VddDynamicOperating Vdd = Max., Com. — 110 — 90 — 50 mA
Supply Current iOut = 0 mA, f = fmax Ind. — 115 — 95 — 60
Auto. — — — 140 — 100
typ.
(2)
60
iCC1 Operating Vdd = Max., Com. — 85 — 85 — 45 mA
Supply Current iOut = 0 mA, f = 0 Ind. — 90 — 90 — 55
Auto. — — — 110 — 90
isb1 TTLStandbyCurrent Vdd = Max., Com. — 30 — 30 — 30 mA
(TTLInputs) Vin = Vih or Vil Ind. — 35 — 35 — 35
CE ≥ Vih,f=0 Auto. — — — 70 — 70
isb2 CMOSStandby Vdd = Max., Com. — 20 — 20 — 20 mA
Current(CMOSInputs) CE ≥ Vdd – 0.2V, Ind. — 25 — 25 — 25
Vin ≥ Vdd – 0.2V, or Auto. — — — 60 — 60
Vin ≤ 0.2V
, f = 0 typ.
(2)
4
Note:
1. At f = f
max, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatV
dd=3.0V,Ta = 25
o
C and not 100% tested.
6 Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
06/01/2016
IS61WV51232ALL/ALS
IS61WV51232BLL/BLS
IS64WV51232BLL/BLS
POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
-25 -35
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
iCC VddDynamicOperating Vdd = Max., Com. — 30 — 25 mA
Supply Current iOut = 0 mA, f = fmax Ind. — 35 — 30
Auto. — 60 — 60
typ.
(2)
25
iCC1 Operating Vdd = Max., Com. — 20 — 20 mA
Supply Current iOut = 0 mA, f = 0 Ind. — 30 — 30
Auto. — 50 — 50
isb1 TTLStandbyCurrent Vdd = Max., Com. — 15 — 15 mA
(TTLInputs) Vin = Vih or Vil Ind. — 20 — 20
CE ≥ Vih, f = 0 Auto. — 40 — 40
isb2 CMOSStandby Vdd = Max., Com. — 0.8 — 0.8 mA
Current(CMOSInputs) CE ≥ Vdd – 0.2V, Ind. — 1.2 — 1.2
Vin ≥ Vdd – 0.2V, or Auto. — 2 — 2
Vin ≤ 0.2V
, f = 0 typ.
(2)
0.1 0.1
Note:
1. At f = f
max, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatV
dd=3.0V,Ta = 25
o
C and not 100% tested.
OPERATING RANGE (VDD) (IS61WV51232BLS)
(1)
Range Ambient Temperature VDD (25 nS)
1
Commercial 0°Cto+70°C 2.4V-3.6V
Industrial –40°Cto+85°C 2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 25ns. When operated in the
range of 3.3V + 5%, the device meets 20ns.
LOW POWER
OPERATING RANGE (VDD) (IS61WV51232ALS)
Range Ambient Temperature VDD Speed
Commercial 0°Cto+70°C 1.65V-2.2V 35ns
Industrial –40°Cto+85°C 1.65V-2.2V 35ns
Automotive –40°Cto+125°C 1.65V-2.2V 35ns
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

IS61WV51232BLL-10BLI

Mfr. #:
Buy IS61WV51232BLL-10BLI
Manufacturer:
ISSI
Description:
SRAM 16M (512Kx32) 10ns Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
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