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BT1308W-600D,115

P1-P3P4-P6P7-P9P10-P12P13-P15
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
S
O
T
2
2
3
BT1308W-600D
4Q Triac
20 August 2013 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package.
This very sensitive gate "series D" triac is intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
•
Direct interfacing to logic level ICs
•
Direct interfacing to low power gate drivers and microcontrollers
•
High blocking voltage capability
•
Planar passivated for voltage ruggedness and reliability
•
Surface-mountable package
•
Triggering in all four quadrants
•
Very sensitive gate
3. Applications
•
AC Fan controller
•
General purpose low power phase control
•
General purpose low power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 600 V
I
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 9 A
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
- - 0.8 A
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 9
- 1 5 mAI
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 9
- 2 5 mA
NXP Semiconductors
BT1308W-600D
4Q Triac
BT1308W-600D All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 20 August 2013 2 / 14
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 9
- 2 5 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 9
- 4 7 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
4 T2 main terminal 2
1 32
4
SC-73 (SOT223)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT1308W-600D SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
P1-P3P4-P6P7-P9P10-P12P13-P15

BT1308W-600D,115

Mfr. #:
Buy BT1308W-600D,115
Manufacturer:
WeEn Semiconductors
Description:
Triacs Thyristor TRIAC 600V 10A 4-Pin (3+Tab)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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