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BT1308W-600D,115

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
BT1308W-600D
4Q Triac
BT1308W-600D All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 20 August 2013 6 / 14
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
thermal resistance
from junction to solder
point
full cycle; Fig. 8 - - 15 K/W
full cycle; for minimum footprint; Fig. 6 - 156 - K/WR
th(j-a)
thermal resistance
from junction to
ambient
full cycle; for pad area; Fig. 7 - 70 - K/W
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
All dimensions are in mm
Fig. 6. Minimum footprint SOT223
001aab509
7
4.6
15
36
9
10
18
4.5
60
50
All dimensions are in mm
Printed circuit board:
FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 7. Printed circuit board pad area: SOT223
NXP Semiconductors
BT1308W-600D
4Q Triac
BT1308W-600D All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 20 August 2013 7 / 14
0
0
3
a
a
c
2
1
0
1
0
-
2
1
0
-
1
1
1
0
1
0
2
1
0
-
5
1
0
-
4
1
0
-
3
1
0
-
2
1
1
0
t
p
(
s
)
Z
t
h
(
j
-
s
p
)
(
K
/
W
)
1
0
-
1
t
p
P
t
Fig. 8. Transient thermal impedance from junction to solder point as a junction of pulse width
NXP Semiconductors
BT1308W-600D
4Q Triac
BT1308W-600D All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 20 August 2013 8 / 14
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 9
- 1 5 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 9
- 2 5 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 9
- 2 5 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 9
- 4 7 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 10
- 1 10 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 10
- 5 10 mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 10
- 1 10 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 10
- 2 10 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 11 - 1 10 mA
V
T
on-state voltage I
T
= 0.85 A; T
j
= 25 °C; Fig. 12 - 1.35 1.6 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 13
- 0.9 1.5 VV
GT
gate trigger voltage
V
D
= 600 V; I
T
= 0.1 A; T
j
= 110 °C;
Fig. 13
0.1 0.7 - V
I
D
off-state current V
D
= 600 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 110 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
30 45 - V/µs
dV
com
/dt rate of change of
commutating voltage
V
D
= 600 V; T
j
= 50 °C; dI
com
/dt = 0.3 A/
ms; I
T
= 0.84 A; gate open circuit
- 5 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 1 A; V
D
= 600 V; I
G
= 25 mA; dI
G
/
dt = 5 A/µs
- 2 - µs
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BT1308W-600D,115

Mfr. #:
Buy BT1308W-600D,115
Manufacturer:
WeEn Semiconductors
Description:
Triacs Thyristor TRIAC 600V 10A 4-Pin (3+Tab)
Lifecycle:
New from this manufacturer.
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