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BT1308W-600D,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
NXP Semiconductors
BT1308W-600D
4Q T
riac
BT1308W-600D
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
20 August 2013
3 / 14
7.
Limiting values
T
able 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state voltage
-
600
V
I
T(RMS)
RMS on-state current
full sine wave; T
sp
≤ 107 °C;
Fig. 1
;
Fig. 2
;
Fig. 3
-
0.8
A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4
;
Fig. 5
-
9
A
I
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
-
10
A
I
2
t
I2t for fusing
t
p
= 10 ms; SIN
-
0.32
A
2
s
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/µs;
T2+ G+
-
50
A/µs
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/µs;
T2+ G-
-
50
A/µs
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/µs;
T2- G-
-
50
A/µs
dI
T
/dt
rate of rise of on-state current
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/µs;
T2- G+
-
10
A/µs
I
GM
peak gate current
-
1
A
P
GM
peak gate power
-
5
W
P
G(A
V)
average gate power
over any 20 ms period
-
0.1
W
T
stg
storage temperature
-40
150
°C
T
j
junction temperature
-
125
°C
NXP Semiconductors
BT1308W-600D
4Q T
riac
BT1308W-600D
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
20 August 2013
4 / 14
003aab
489
0
2
4
6
10
-2
10
-1
1
10
su
rge d
uration (s
)
I
T(RMS)
(A)
f = 50 Hz; T
sp
= 107 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
003aab48
7
0
0.2
0.4
0.6
0.8
1
-50
0
5
0
100
1
50
T
sp
(
°
C)
I
T(R
MS)
(A)
Fig. 2.
RMS on-state current as a function of solder
point temperature; maximum values
003
aac209
0.0
0.4
0.8
1.2
0
0.2
0.4
0.6
0.8
1
I
T(R
MS
)
(A)
P
tot
(W)
α
= 180
°
120
°
90°
60°
30
°
c
o
n
d
u
c
t
i
o
n
a
n
g
l
e
(
d
e
g
r
e
e
s
)
f
o
rm
f
a
c
t
o
r
a
3
0
6
0
9
0
1
2
0
1
8
0
4
2
.
8
2
.
2
1
.
9
1
.
5
7
α
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(A
V)
Fig. 3.
T
otal power dissipation as a function of RMS on-state current; maximum values
NXP Semiconductors
BT1308W-600D
4Q T
riac
BT1308W-600D
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
20 August 2013
5 / 14
003aac207
0
4
8
12
1
10
10
2
10
3
nu
mbe
r of cyc
les
I
TSM
(A)
I
T
S
M
t
I
T
T
j(init)
=
2
5
°
C
m
a
x
1
/
f
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aac208
10
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
I
TSM
(A)
I
T
S
M
t
I
T
T
j(init)
=
2
5
°
C
m
a
x
t
p
(
1
)
(
2
)
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BT1308W-600D,115
Mfr. #:
Buy BT1308W-600D,115
Manufacturer:
WeEn Semiconductors
Description:
Triacs Thyristor TRIAC 600V 10A 4-Pin (3+Tab)
Lifecycle:
New from this manufacturer.
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