7©2016 Integrated Device Technology, Inc Revision B April 20, 2016
843N571I Data Sheet
Table 6B. AC Characteristics for Single Side Band Power Levels (LVPECL Outputs),
V
CC
= 3.3V ± 0.3V, V
EE
= 0V, T
A
= 25°C
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium
has been reached under these conditions.
Symbol Parameter Test Conditions Minimum Typical Maximum Units
N
(1k)
Single-side band phase noise,
1kHz from Carrier
156.25MHz,
33.33MHz Output disabled
-120 dBc/Hz
N
(10k)
Single-side band phase noise,
10kHz from Carrier
-132 dBc/Hz
N
(100k)
Single-side band phase noise,
100kHz from Carrier
-135 dBc/Hz
N
(1M)
Single-side band phase noise,
1MHz from Carrier
-140 dBc/Hz
N
(10M)
Single-side band phase noise,
10MHz from Carrier
-156 dBc/Hz
N
(20M)
Single-side band phase noise,
20MHz from Carrier
-157 dBc/Hz
N
(1k)
Single-side band phase noise,
1kHz from Carrier
125MHz,
33.33MHz Output disabled
-121 dBc/Hz
N
(10k)
Single-side band phase noise,
10kHz from Carrier
-133 dBc/Hz
N
(100k)
Single-side band phase noise,
100kHz from Carrier
-137 dBc/Hz
N
(1M)
Single-side band phase noise,
1MHz from Carrier
-143 dBc/Hz
N
(10M)
Single-side band phase noise,
10MHz from Carrier
-153 dBc/Hz
N
(20M)
Single-side band phase noise,
20MHz from Carrier
-153 dBc/Hz
N
(1k)
Single-side band phase noise,
1kHz from Carrier
100MHz,
33.33MHz Output disabled
-123 dBc/Hz
N
(10k)
Single-side band phase noise,
10kHz from Carrier
-135 dBc/Hz
N
(100k)
Single-side band phase noise,
100kHz from Carrier
-139 dBc/Hz
N
(1M)
Single-side band phase noise,
1MHz from Carrier
-145 dBc/Hz
N
(10M)
Single-side band phase noise,
10MHz from Carrier
-154 dBc/Hz
N
(20M)
Single-side band phase noise,
20MHz from Carrier
-154 dBc/Hz
8©2016 Integrated Device Technology, Inc Revision B April 20, 2016
843N571I Data Sheet
Table 6C. LVCMOS AC Characteristics, V
CC
= 3.3V ± 0.3V, T
A
= -40°C to 85°C
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium
has been reached under these conditions
NOTE 1: Refer to the Phase Noise Plot.
NOTE 2: This parameter is defined in accordance with JEDEC Standard 65.
NOTE 3: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at V
CC
/2.
Table 6D. AC Characteristics for Single Side Band Power Levels (LVCMOS Outputs),
V
CC
= 3.3V ± 0.3V, V
EE
= 0V, T
A
= 25°C
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium
has been reached under these conditions.
Symbol Parameter Test Conditions Minimum Typical Maximum Units
f
IN
Input Frequency 25 MHz
f
OUT
Output Frequency 25 33.33 MHz
tjit()
RMS Phase Jitter (Random)
NOTE 1
33.33MHz f
OUT
, 25MHz crystal
Integration Range:
12kHz – 5MHz
0.266 ps
25MHz f
OUT
, 25MHz crystal
Integration Range:
12kHz – 5MHz
0.212 ps
tsk(o)
Output Skew;
NOTE 2, 3
QREF[0:5] Measured on the Rising Edge 50 ps
PSNR
Power Supply
Noise Reduction
Pin 40,
(V
CC
)
From DC to 6.25MHz -80 dB
t
R
/ t
F
Output Rise/Fall Time 20% to 80% 200 600 ps
odc Output Duty Cycle 48 52 %
Symbol Parameter Test Conditions Minimum Typical Maximum Units
N
(1k)
Single-side band phase noise,
1kHz from Carrier
33.33MHz
-134 dBc/Hz
N
(10k)
Single-side band phase noise,
10kHz from Carrier
-144 dBc/Hz
N
(100k)
Single-side band phase noise,
100kHz from Carrier
-149 dBc/Hz
N
(1M)
Single-side band phase noise,
1MHz from Carrier
-153 dBc/Hz
N
(5M)
Single-side band phase noise,
5MHz from Carrier
-159 dBc/Hz
N
(1k)
Single-side band phase noise,
1kHz from Carrier
25MHz
-137 dBc/Hz
N
(10k)
Single-side band phase noise,
10kHz from Carrier
-152 dBc/Hz
N
(100k)
Single-side band phase noise,
100kHz from Carrier
-158 dBc/Hz
N
(1M)
Single-side band phase noise,
1MHz from Carrier
-160 dBc/Hz
N
(5M)
Single-side band phase noise,
5MHz from Carrier
-160 dBc/Hz
9©2016 Integrated Device Technology, Inc Revision B April 20, 2016
843N571I Data Sheet
Typical Phase Noise at 25MHz (LVCMOS Output)
Typical Phase Noise at 33.33MHz (LVCMOS Output)
Noise Power dBc
Hz
Offset Frequency (Hz)
Noise Power dBc
Hz
Offset Frequency (Hz)

843N571BKILF

Mfr. #:
Manufacturer:
IDT
Description:
Clock Synthesizer / Jitter Cleaner FemtoClock NG Clock Synthesizer
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet