NCV8851
http://onsemi.com
10
This sequence begins once V
IN_IC
surpasses its UVLO
threshold when the part is enabled and the LDO output has
risen. After an initial delay to assure a clean start−up,
switching begins, the output initially rises quickly and then
rises monotonically. The duty cycle is gradually increased
until V
OUT
has reached its set point or until maximum duty
cycle is reached.
Normal Shutdown Behavior and Sleep Mode
Normal shutdown occurs when the IC stops switching
because the input supply drops below the UVLO threshold,
the part enters TSD or the part is disabled. When disabled,
the part enters sleep mode.
In sleep mode, the LDO turns off and its output capacitor
discharges, causing switching to stop, the internal soft−start
capacitor to discharge and GH and GL to go low. The switch
node enters a high impedance state and the output inductor
and capacitors discharge through the load. The supply
current reduces to the sleep mode quiescent current.
Internal Linear Regulator (LDO)
The NCV8851 has an onboard low−dropout linear
regulator (LDO) internally connected to drive the low−side
gate. The 6V
OUT
pin should be externally connected to the
V
IN_IC
pin to power the internal rails. Typically, a RC filter
is used from 6V
OUT
to V
IN_IC
to further decrease noise on
the internal rails.
The 6V
OUT
pin should be externally connected through a
diode to the BST pin, charging the BST capacitor during
off−time to generate a voltage for the high−side driver.
When the part is enabled and V
IN
is below the LDO
regulated value, the LDO is in dropout and it tracks V
IN
. The
LDO regulates its output once V
IN
is above the output set
point plus the dropout voltage.
An external bypass capacitor must be connected from
6V
OUT
to ground. A short to ground or overcurrent
condition on the 6V
OUT
pin will be mitigated by the LDO
current limit and internal thermal shutdown (TSD) circuitry
which disables all outputs. A normal soft−start will occur
when the die temperature falls below the TSD threshold.
Drivers
The NCV8851 includes 1.5 A gate drivers to switch
external N−Channel MOSFETs. This allows the NCV8851
to address high−power, as well as low−power conversion
requirements. The gate drivers also include adaptive
non−overlap circuitry. The non−overlap circuitry increases
efficiency, which minimizes power dissipation, by
minimizing the body diode conduction time, while
protecting against cross−conduction (shoot−through) of the
MOSFETs. A detailed block diagram of the non−overlap
and gate drive circuitry used in the chip and related external
components is shown in Figure 23.
PGND
GH
GL
BST
Main
PWM
Output
MainFault
GL
Threshold
Threshold
GL to GH
Delay
GH to GL
Delay
Figure 23. Gate Driver Block Diagram
Fault
V
SW
V
SW
V
SW
6V
OUT
A capacitor is placed from V
SW
to BST and a diode is
placed from 6V
OUT
to BST to create a bootstrap supply on
the BST pin for the high−side floating gate driver. This
ensures that the voltage on BST is about 6V
OUT
higher than
V
SW
, less a diode drop, yielding a gate drive voltage high
enough to enhance the high−side MOSFET. The BST
capacitor supplies the charge used by the gate driver to
charge up the input capacitance of the high−side MOSFET,
and is typically chosen to be at least a decade larger than this
capacitance. A 0.1 mF BST capacitor is recommended.
Since the BST capacitor only recharges when the
low−side MOSFET is on, pulling V
SW
down to ground, the
NCV8851 has a minimum off−time. This also means that the
BST capacitor cannot be arbitrarily large, since 6V
OUT
needs to be able to charge it up during this minimum
off−time so the high−side gate driver doesn’t run out of
headroom. 6V
OUT
needs to supply charge both to the BST
capacitor and also the low−side driver, so the LDO capacitor
must be sufficiently larger than the BST capacitor. A 1 mF
LDO capacitor is recommended.