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VS-ST303S12PFK0

P1-P3P4-P6P7-P9P10-P10
VS-ST303SP Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Mar-17
4
Document Number: 94375
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
Maximum Allowable Case Temperature (°C)
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
ST303S Se rie s
R ( D C ) = 0. 10 K/ W
thJC
40
50
60
70
80
90
100
110
120
130
0100200300400500
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
ST3 0 3 S Se r i e s
R (DC) = 0.10 K/ W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
1
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
.
3
K
/
W
0
.
5
K
/
W
0
.
2
K
/
W
0
.
1
6
K
/
W
0
.
1
2
K
/
W
0
.
0
6
K/
W
0
.
0
8
K
/
W
0
.
0
3
K
/
W
0
100
200
300
400
500
600
0 50 100 150 200 250 300
180°
120°
90°
60°
30°
RM S Li m it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST303S Series
T = 1 2 5 ° C
J
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
1
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
.
3
K
/
W
0
.
5
K
/
W
0
.
2
K
/
W
0
.
1
2
K
/
W
0
.
0
6
K
/
W
0
.
0
3
K
/
W
0
100
200
300
400
500
600
700
800
900
0 50 100150200250300350400450500
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST3 0 3 S Se r i e s
T = 125°C
J
VS-ST303SP Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Mar-17
5
Document Number: 94375
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
3000
3500
4000
4500
5000
5500
6000
6500
7000
110100
Numb er Of Equa l Amplitud e Half Cycle Current Pulses (N)
Pe a k Ha lf Sine Wave On-state Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST3 0 3 S Se r i e s
At Any Rated Load Condition And With
Ra t ed V App lie d Follo w ing Surg e .
RRM
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
0.01 0.1 1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Peak Half Sine Wave On-state Current (A)
Init ial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST3 0 3 S Se r i e s
Maximum Non Repetitive Surge Current
100
1000
10000
12345678
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 1 2 5 ° C
J
ST3 0 3 S Se r i e s
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJC
Transient Thermal Impedance Z (K/W)
St e a d y St a t e V a l u e
R = 0 . 1 0 K/ W
(DC Operation)
thJC
ST3 0 3 S Se r i e s
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
I = 500 A
300 A
200 A
100 A
50 A
Maximum Reverse Recovery Charge - Qrr (µC)
ST3 0 3 S Se r i e s
T = 12 5 ° C
J
TM
20
40
60
80
100
120
140
160
180
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/ µs)
I = 500 A
300 A
200 A
100 A
50 A
Maximum Reverse Recovery Current - Irr (A)
ST3 0 3 S Se r i e s
T = 125 °C
J
TM
VS-ST303SP Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Mar-17
6
Document Number: 94375
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pu l se Ba se w id t h ( µs)
Pea k O n-st a t e C urre n t ( A)
1000
1500
200
500
Snub b e r c irc uit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
DRM
2000
ST3 0 3 S Series
Sinusoidal pulse
T = 40°C
C
tp
1 E1 1 E2 1 E3 1 E4
50 Hz
400
100
Pu l se Ba se w id t h ( µ s)
1000
1500
200
500
ST3 0 3 S Se r i e s
Si n u so i d a l p u l s e
T = 6 5 ° C
C
Sn u b b e r c i r c u i t
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
DRM
tp
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
100
1500
200
Pu l se Ba se w id t h ( µ s)
Peak On-state Current (A)
2500
400
1000
50 Hz
500
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
D
DRM
ST3 03 S Se r i e s
Trapezoidal pulse
T = 4 0 ° C
di/dt = 50A/µs
C
2000
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
200
Pu l se Ba se w id t h ( µ s)
Peak On-state Current (A)
2000
Snub ber circuit
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
D
DRM
ST3 0 3 S Se r i e s
Trapezoidal pulse
T = 4 0 ° C
d i/ d t = 100A/ µs
C
tp
500
1 E1 1 E2 1 E3 1 E4
50 Hz
400
100
1000
1500
200
Pu l se Ba se w id t h ( µs)
ST3 0 3 S Series
Trapezoidal pulse
T = 6 5 ° C
di/ d t = 100A/ µs
C
Sn u b b e r c i r c u i t
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
DRM
2000
tp
500
P1-P3P4-P6P7-P9P10-P10

VS-ST303S12PFK0

Mfr. #:
Buy VS-ST303S12PFK0
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules Thyristors - TO-118 COMP RND-e3
Lifecycle:
New from this manufacturer.
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