VS-ST303SP Series
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Vishay Semiconductors
Revision: 15-Mar-17
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Document Number: 94375
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Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
1E1
1E2
1E3
1E4
1E5
1 E1 1 E2 1 E3 1 E4
Pulse Ba sew id t h ( µs)
20 joules p er pulse
2
1
Peak On-state Current (A)
0.5
10
5
3
0.4
ST3 0 3 S Se r i e s
Sinusoid al p ulse
tp
1E1 1E2 1E3 1E4
Pulse Ba sew id t h ( µ s)
20 joule s p er p ulse
2
1
0.5
10
5
ST3 0 3 S Se r i e s
Rectangular pulse
di/dt = 50A/µs
tp
3
0.4
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 1 2 5 ° C
Tj= - 4 0 ° C
(1)
(2)
Instant a neous Ga te Current (A)
In st a n t a n e o us G a t e V o l t a g e ( V )
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
rated d i/ dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
De vic e: ST303S Series
(4)
Frequency Limited by PG(AV)
