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NCS2003ASN2T1G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
www.onsemi.com
10
TYPICAL CHARACTERISTICS
Figure 14. Inverting Small Signal Transient
Response
TIME (ms)
VOLTAGE (mV)
V
S
= 1.8 V
R
L
= 2 kW
T
A
= 25°C
140
−20 0
Input
Output
Figure 15. Non−Inverting Small Signal
Transient Response
TIME (ms)
VOLTAGE (mV)
V
S
= 1.8 V
R
L
= 2 kW
T
A
= 25°C
Input
Output
Figure 16. Inverting Large Signal Transient
Response
TIME (ms)
VOLTAGE (mV)
1800
V
S
= 1.8 V
R
L
= 2 kW
T
A
= 25°C
Input
Output
Figure 17. Non−Inverting Large Signal
Transient Response
TIME (ms)
VOLTAGE (mV)
V
S
= 1.8 V
R
L
= 2 kW
T
A
= 25°C
Input
Output
Figure 18. Non−Inverting Large Signal
Transient Response
TIME (ms)
VOLTAGE (V)
6
V
S
= 5 V
R
L
= 2 kW
T
A
= 25°C
Input
Output
Figure 19. THD+N vs. Output Voltage
120
100
80
60
40
20
0
−20
20 40 60
140
120
100
80
60
40
20
0
−20
−20 0 20 40 60
−20 0 20 40 60
1600
1400
1200
1000
800
600
400
200
0
−200
1800
1600
1400
1200
1000
800
600
400
200
0
−200
−20 0 20 40 60
−20 0 20 40 60
5
4
3
2
1
0
−1
OUTPUT VOLTAGE (Vpp)
1010.10.01
0.0001
THD+N (%)
1
0.1
0.01
0.001
R
L
= 2 kW
A
V
= +1
T
A
= 25°C
f = 1 kHz
V
S
= 1.8 V
V
S
= 5 V
10
100
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
www.onsemi.com
11
TYPICAL CHARACTERISTICS
Figure 20. THD+N vs. Frequency Figure 21. Input Voltage Noise vs. Frequency
FREQUENCY (Hz) FREQUENCY (Hz)
100k10k1k10010
0.0001
140
THD+N (%)
VOLTAGE NOISE (nV/√Hz
)
1
0.1
0.01
0.001
R
L
= 2 kW
A
V
= +1
T
A
= 25°C
f = 1 kHz
V
S
= 1.8 V
V
S
= 5 V
100k10k1k10010
V
S
= 1.8 V
V
IN
= V
S
/2
120
100
80
60
40
20
0
T
A
= 25°C
Figure 22. Noise Density vs. Frequency
FREQUENCY (Hz)
10
CURRENT NOISE DENSITY (pA/√Hz)
100k10k1k10010
V
S
= 1.8 V
V
IN
= V
S
/2
1
0.1
0.01
0.001
0.0001
0.00001
T
A
= 25°C
Figure 23. Falling Edge Slew Rate @ Vs = 5 V
11 12 13 14
FALLING EDGE SLEW RATE (V/ms)
0
5
10
15
20
25
30
35
40
NUMBER OF PARTS
Figure 24. Rising Edge Slew Rate @ Vs = 5 V Figure 25. Channel Separation
789
RISING EDGE SLEW RATE (V/ms)
0
5
10
15
20
25
30
35
45
NUMBER OF PARTS
V
S
= 5 V
T
A
= 25°C
40
10 100 100K
FREQUENCY (Hz)
−120
−110
−100
−90
−70
−50
−40
−30
0
CHANNEL SEPARATION (dB)
−10
1K 10K 1M
−80
−60
−20
T
A
= 25°C
Vs = 1.8 V
Vs = 5 V
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
www.onsemi.com
12
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
DIM MIN MAX
MILLIMETERS
A 3.00 BSC
B 1.50 BSC
C 0.90 1.10
D 0.25 0.50
G 0.95 BSC
H 0.01 0.10
J 0.10 0.26
K 0.20 0.60
M 0 10
S 2.50 3.00
123
54
S
A
G
B
D
H
C
J
__
0.7
0.028
1.0
0.039
ǒ
mm
inches
Ǔ
SCALE 10:1
0.95
0.037
2.4
0.094
1.9
0.074
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.20
5X
C AB
T0.10
2X
2X
T0.20
NOTE 5
C
SEATING
PLANE
0.05
K
M
DETAIL Z
DETAIL Z
TOP VIEW
SIDE VIEW
A
B
END VIEW
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

NCS2003ASN2T1G

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Manufacturer:
ON Semiconductor
Description:
Operational Amplifiers - Op Amps LOW VOLTAGE RAIL TO RAI
Lifecycle:
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