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NCS2003ASN2T1G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS: V
S
= +1.8 V
At T
A
= +25°C, R
L
= 10 kW connected to midsupply, V
CM
= V
OUT
= midsupply, unless otherwise noted. Boldface limits apply over the
specified temperature range. Guaranteed by design and/or characterization.
Parameter
Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage
V
OS
NCS2003A 0.5 3.0 mV
NCx2003, NCx20032, NCx20034
0.5 4.0 mV
5.0 mV
Offset Voltage Drift
DV
OS
/DT 2.0
mV/°C
NCS2003A (Note 8) 6.0
mV/°C
Input Bias Current I
IB
1 pA
Input Offset Current I
OS
1 pA
Channel Separation XTLK DC, NCx20032, NCx20034 100 dB
Input Resistance R
IN
1
TW
Input Capacitance C
IN
1.2 pF
Common Mode Rejection
Ratio
CMRR
V
IN
= V
SS
to V
DD
– 0.6 V 70 80
dB
V
IN
= V
SS
+ 0.2 V to V
DD
– 0.6 V 65
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
A
VOL
R
L
= 10 kW 80 92
dB
75
R
L
= 2 kW 92
70
Output Current Capability
(Note 8)
I
SC
Sourcing 5 8
mA
Sinking 10 14
Output Voltage High V
OH
R
L
= 10 kW
1.75 1.798
V
R
L
= 2 kW
1.7 1.78
Output Voltage Low VOL
R
L
= 10 kW NCx2003, A 7 50
mV
NCx2003x 7 100
R
L
= 2 kW
20 100
NOISE PERFORMANCE
Voltage Noise Density
e
N
f = 1 kHz 20 nV/√Hz
Current Noise Density i
N
f = 1 kHz 0.1 pA√Hz
DYNAMIC PERORMANCE
Gain Bandwidth Product
GBWP 5 MHz
Slew Rate at Unity Gain SR
Rising Edge, R
L
= 2 kW, A
V
= +1
6
V/ms
Falling Edge, R
L
= 2 kW, A
V
= +1
9
Phase Margin
y
m
R
L
= 10 kW, C
L
= 5 pF
53 °
Gain Margin A
m
R
L
= 10 kW, C
L
= 5 pF NCx2003, A 12
dB
NCx2003x 8
Settling Time t
S
V
O
= 1 Vpp,
Gain = 1, C
L
= 20 pF
Settling time to
0.1%
1.8
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Guaranteed by design and/or characterization.
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS: V
S
= +1.8 V
At T
A
= +25°C, R
L
= 10 kW connected to midsupply, V
CM
= V
OUT
= midsupply, unless otherwise noted. Boldface limits apply over the
specified temperature range. Guaranteed by design and/or characterization.
Parameter UnitMaxTypMinConditionsSymbol
DYNAMIC PERORMANCE
Total Harmonics Distortion +
Noise
THD+N
V
O
= 1 V
pp
, R
L
= 2 kW, A
V
= +1, f = 1 kHz
0.005
%
V
O
= 1 V
pp
, R
L
= 2 kW, A
V
= +1, f = 10 kHz
0.025
POWER SUPPLY
Power Supply Rejection Ratio
PSRR NCx2003
72 80
dB
65
NCx20032, NCx20034 80 100
Quiescent Current I
DD
No load, per channel NCx2003, A
230 560 mA
1000
NCx20032,
NCx20034
275 375
575
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Guaranteed by design and/or characterization.
ELECTRICAL CHARACTERISTICS: V
S
= +5.0 V
At T
A
= +25°C, R
L
= 10 kW connected to midsupply, V
CM
= V
OUT
= midsupply, unless otherwise noted. Boldface limits apply over the
specified temperature range. Guaranteed by design and/or characterization.
Parameter
Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage
V
OS
NCS2003A 0.5 3.0 mV
NCx2003 0.5 4.0 mV
NCx20032, NCx20034 5.0 mV
Offset Voltage Drift
DV
OS
/DT 2.0
mV/°C
NCS2003A (Note 9) 6.0
mV/°C
Input Bias Current I
IB
1 pA
Input Offset Current I
OS
1 pA
Channel Separation XTLK DC, NCx20032, NCx20034 100 dB
Input Resistance R
IN
1
TW
Input Capacitance C
IN
1.2 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
9. Guaranteed by design and/or characterization.
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
www.onsemi.com
6
ELECTRICAL CHARACTERISTICS: V
S
= +5.0 V
At T
A
= +25°C, R
L
= 10 kW connected to midsupply, V
CM
= V
OUT
= midsupply, unless otherwise noted. Boldface limits apply over the
specified temperature range. Guaranteed by design and/or characterization.
Parameter UnitMaxTypMinConditionsSymbol
INPUT CHARACTERISTICS
Common Mode Rejection Ratio
CMRR NCx2003, A
V
IN
= V
SS
to V
DD
–
0.6 V
65 90
dB
V
IN
= V
SS
+ 0.2 V
to V
DD
– 0.6 V
63
NCx20032, NCx20034
V
IN
= V
SS
to V
DD
–
0.6 V
70 90
V
IN
= V
SS
+ 0.2 V
to V
DD
– 0.6 V
65
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
A
VOL
R
L
= 10 kW 86 92
dB
78
R
L
= 2 kW 83 92
78
Output Current Capability
(Note 9)
I
SC
Sourcing 40 76
mA
Sinking 50 96
Output Voltage High V
OH
R
L
= 10 kW
4.95 4.99
V
R
L
= 2 kW
4.9 4.97
Output Voltage Low VOL
R
L
= 10 kW NCx2003, A 8 50
mV
NCx2003x 8 100
R
L
= 2 kW
24 100
NOISE PERFORMANCE
Voltage Noise Density
e
N
f = 1 kHz 20 nV/√Hz
Current Noise Density i
N
f = 1 kHz 0.1 pA√Hz
DYNAMIC PERORMANCE
Gain Bandwidth Product
GBWP 7 MHz
Slew Rate at Unity Gain SR
Rising Edge, R
L
= 2 kW, AV = +1
8 V/ms
Falling Edge, R
L
= 2 kW, AV = +1
12.5
Phase Margin
y
m
R
L
= 10 kW, C
L
= 5 pF NCx2003, A 64
°
NCx2003x 56
Gain Margin A
m
R
L
= 10 kW, C
L
= 5 pF
9 dB
Settling Time t
S
V
O
= 1 V
pp
,
Gain = 1, C
L
= 20 pF
Settling time to
0.1%
0.6
ms
Total Harmonics Distortion +
Noise
THD+N
V
O
= 4 V
pp
, R
L
= 2 kW, A
V
= +1, f = 1 kHz
0.002
%
V
O
= 4 V
pp
, R
L
= 2 kW, A
V
= +1, f = 10 kHz
0.01
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
9. Guaranteed by design and/or characterization.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

NCS2003ASN2T1G

Mfr. #:
Buy NCS2003ASN2T1G
Manufacturer:
ON Semiconductor
Description:
Operational Amplifiers - Op Amps LOW VOLTAGE RAIL TO RAI
Lifecycle:
New from this manufacturer.
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