DirectFET Power MOSFET
Description
The IRF6712SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6712SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6712SPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.14mH, R
G
= 25, I
AS
= 13A.
Notes:
DirectFET ISOMETRIC
SQ
SQ
SX ST MQ MX MT MP
l RoHS Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for both Sync.FET and some Control FET
application
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
V
GS,
Gate -to -Source Voltage (V)
0
2
4
6
8
10
12
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
)
I
D
= 17A
T
J
= 25°C
T
J
= 125°C
Parameter Units
V
DS
Drain-to-Source Voltage V
V
Gate-to-Source Voltage
I
@ T
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
@ T
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
@ T
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
13
Max.
13
68
130
±20
25
17
13
V
DSS
V
GS
R
DS(on)
R
DS(on)
25V max ±20V max
3.8m@ 10V 6.7m@ 4.5V
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
12nC 4.0nC 1.7nC 14nC 10nC 1.9V
0 5 10 15 20 25 30 35
Q
G
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 20V
V
DS
= 13V
I
D
= 13A
IRF6712SPbF
IRF6712STRPbF
1
www.irf.com © 2013 International Rectifier June 11, 2013
Base Part Number Package Type Orderable Part Number
Form Quantity
IRF6712SPbF DirectFET Small Can Tape and Reel 4800 IRF6712STRPbF
Tape and Reel 1000 IRF6712STR1PbF
