IRF6712STRPBF

www.irf.com © 2013 International Rectifier June 11, 2013
4
IRF6712SPbF
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
60μs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
60μs PULSE WIDTH
Tj = 25°C
2.5V
1 2 3 4 5
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 150°C
T
J
= 25°C
T
J
= -40°C
V
DS
= 15V
60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 17A
V
GS
= 10V
V
GS
= 4.5V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 50 100 150
I
D
, Drain Current (A)
0
5
10
15
20
25
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
)
T
J
= 25°C
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
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IRF6712SPbF
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Drain Current
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
SD
, Source-to-Drain Voltage (V)
0
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 150°C
T
J
= 25°C
T
J
= -40°C
V
GS
= 0V
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
T
y
p
i
c
a
l
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 50μA
I
D
= 100μA
I
D
= 250μA
I
D
= 1.0mA
I
D
= 1.0A
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
10
20
30
40
50
60
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 3.8A
5.4A
BOTTOM 13A
0.10 1.00 10.00 100.00
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
T
A
= 25°C
T
J
= 150°C
Single Pulse
100μsec
1msec
10msec
25 50 75 100 125 150
T
C
, Case Temperature (°C)
0
10
20
30
40
50
60
70
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
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6
IRF6712SPbF
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
Fig 16b. Unclamped Inductive Waveforms
t
p
V
(BR)DSS
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 17b. Switching Time Waveforms
Fig 17a. Switching Time Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
1K
VCC
DUT
0
L
S
20K
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width µs
Duty Factor 
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD

IRF6712STRPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET 25V SINGLE N-CH 20V VGS HEXFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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