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IRF6712STRPBF

P1-P3P4-P6P7-P9
www.irf.com © 2013 International Rectifier June 11, 20137
IRF6712SPbF
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET
®
Power MOSFETs
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
*** V
GS
= 5V for Logic Level Devices
***
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
**
*
*
Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
DirectFET Board Footprint, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
DD
DD
GS
www.irf.com © 2013 International Rectifier June 11, 2013
8
IRF6712SPbF
DirectFET Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET Part Marking
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
IMPERIAL
MIN
4.75
3.70
2.75
0.35
0.48
0.78
0.88
0.78
N/A
0.93
2.00
0.616
0.020
0.08
MAX
4.85
3.95
2.85
0.45
0.52
0.82
0.92
0.82
N/A
0.97
2.10
0.676
0.080
0.17
MIN
0.187
0.146
0.108
0.014
0.019
0.031
0.035
0.031
N/A
0.037
0.079
0.0235
0.0008
0.003
METRIC
DIMENSIONS
MAX
0.191
0.156
0.112
0.018
0.020
0.032
0.036
0.032
N/A
0.038
0.083
0.0274
0.0031
0.007
www.irf.com © 2013 International Rectifier June 11, 20139
IRF6712SPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
Loaded Tape Feed Direction
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
0.063
MIN
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
1.60
DIMENSIONS
METRIC IMPERIAL
STANDARD OPTION (QTY 4800)
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
METRIC
IMPERIAL
TR1 OPTION (QTY 1000)
IMPERIAL
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
METRIC
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
REEL DIMENSIONS
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6712TRPBF). For 1000 parts on 7"
reel, order IRF6712TR1PBF
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
P1-P3P4-P6P7-P9

IRF6712STRPBF

Mfr. #:
Buy IRF6712STRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 25V SINGLE N-CH 20V VGS HEXFET
Lifecycle:
New from this manufacturer.
Delivery:
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