4
Table 4, continued. Electrical Characteristics* (Vref=2.85V, Vcc=3.4V, Temp=+25°C)
[2]
Characteristics Symbol Condition Min. Typ. Max. Unit
Ruggedness Ru Pout<28.0 dBm, Pin<10dBm, All phase ––10:1 VSWR
Phase discontinuity Ph mid_hi Mid <> Hi at Pout=16.0 dBm 7 25 Degree
Ph low_mid Low <> Mid at Pout=7.0 dBm 15 25 Degree
Switching Time High
[5]
DC TswhighDC 20 µs
RF TswhighRF 1 µs
Switching Time Low
[5]
DC TswlowDC 20 µs
RF TswlowRF 1 µs
Turn On Time
[6]
DC TonDC 20 µs
RF TonRF 1 µs
Turn Off Time
[6]
DC ToffDC 20 µs
RF ToffDC 1 µs
Notes:
5. TswhighDC, TswlowDC is time required to reach stable quiescent bias(10%) after Vcont is switched low and high, respectively. TswhighRF, TswlowRF is
time required to reach final output power (±1dB) after Vcont is switched low and high, respectively. TonDC is time required to reach stable quiescent
bias (10%) after Vref is switched high.
6. ToffDC is time required for the current to be less than 10% of the Iq after Vref is switched low. TonRF is time required to reach final output power (±1dB)
after Vref is switched high. ToffRF is time required to output power to drop 30dB after Vref is switched low.
5
Characteristics Data (HSDPA, Control scheme: 3-mode control, Vcc = 3.4V, Vref= 2.85V, T =25°C,
Fo=1950 MHz)
Figure 1. Total Current vs. Output Power.
500
450
400
350
300
250
200
150
100
50
0
-10 -5
Icct (mA)
Pout (dBm)
0 5 10 15 20 25 30
Figure 2. Gain vs. Output Power.
30
25
20
15
10
5
0
-10 -5
GAIN (dB)
Pout (dBm)
0 5 10 15 20 25 30
Figure 3. Power Added Efficiency vs. Output Power.
45
40
35
30
25
20
15
10
5
0
-10 -5
PAE (%)
Pout (dBm)
0 5 10 15 20 25 30
Figure 5. Adjacent Channel Leakage Ratio 2 vs. Output Power.
-40
-45
-50
-55
-60
-65
-70
-10 -5
ACLR2 (dBc)
Pout (dBm)
0 5 10 15 20 25 30
Figure 4. Adjacent Channel Leakage Ratio 1 vs. Output Power.
-30
-35
-40
-45
-50
-55
-60
-10 -5
ACLR1 (dBc)
Pout (dBm)
0 5 10 15 20 25 30
6
Characteristics Data (WCDMA, Control scheme: 3-mode control, Vcc = 3.4V, Vref= 2.85V, T= 25°C,
Fo =1950 MHz)
Figure 6. Total Current vs. Output Power.
500
450
400
350
300
250
200
150
100
50
0
-10 -5
Icct (mA)
Pout (dBm)
0 5 10 15 20 25 30
Figure 7. Gain vs. Output Power.
30
25
20
15
10
5
0
-10 -5
GAIN (dB)
Pout (dBm)
0 5 10 15 20 25 30
Figure 8. Power Added Efficiency vs. Output Power.
45
40
35
30
25
20
15
10
5
0
-10 -5
PAE (%)
Pout (dBm)
0 5 10 15 20 25 30
Figure 9. Adjacent Channel Leakage Ratio 1 vs. Output Power.
-30
-35
-40
-45
-50
-55
-60
-10 -5
ACLR1 (dBc)
Pout (dBm)
0 5 10 15 20 25 30
Figure 10. Adjacent Channel Leakage Ratio 2 vs. Output Power.
-40
-45
-50
-55
-60
-65
-70
-10 -5
ACLR2 (dBc)
Pout (dBm)
0 5 10 15 20 25 30

WS2512-BLK

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
IC AMP W-CDMA 1.92-1.98GHZ 10SMD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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