13
AT45DB011B
1984J–DFLASH–06/06
Note: 1. I
cc1
during a buffer read is 20mA maximum.
DC Characteristics
Symbol Parameter Condition Min Typ Max Units
I
SB
Standby Current CS, RESET, WP = V
IH
, all inputs at
CMOS levels
210µA
I
CC1
(1)
Active Current, Read Operation f = 20 MHz; I
OUT
= 0 mA; V
CC
= 3.6V 4 10 mA
I
CC2
Active Current, Program/Erase
Operation
V
CC
= 3.6V 10 25 mA
I
LI
Input Load Current V
IN
= CMOS levels 1 µA
I
LO
Output Leakage Current V
I/O
= CMOS levels 1 µA
V
IL
Input Low Voltage 0.6 V
V
IH
Input High Voltage 2.0 V
V
OL
Output Low Voltage I
OL
= 1.6 mA; V
CC
= 2.7V 0.4 V
V
OH
Output High Voltage I
OH
= -100 µA V
CC
- 0.2V V
AC Characteristics
Symbol Parameter Min Typ Max Units
f
SCK
SCK Frequency 20 MHz
f
CAR
SCK Frequency for Continuous Array Read 20 MHz
t
WH
SCK High Time 22 ns
t
WL
SCK Low Time 22 ns
t
CS
Minimum CS High Time 250 ns
t
CSS
CS Setup Time 250 ns
t
CSH
CS Hold Time 250 ns
t
CSB
CS High to RDY/BUSY Low 200 ns
t
SU
Data In Setup Time 5 ns
t
H
Data In Hold Time 10 ns
t
HO
Output Hold Time 0 ns
t
DIS
Output Disable Time 18 ns
t
V
Output Valid 20 ns
t
XFR
Page to Buffer Transfer/Compare Time 120 200 µs
t
EP
Page Erase and Programming Time 10 20 ms
t
P
Page Programming Time 715ms
t
PE
Page Erase Time 610ms
t
BE
Block Erase Time 715ms
t
RST
RESET Pulse Width 10 µs
t
REC
RESET Recovery Time 1µs
