PSMN7R5-60YL
N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56
20 November 2015 Product data sheet
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1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product is designed and qualified for use in a wide range of power
supply & motor control equipment.
2. Features and benefits
•
Advanced TrenchMOS provides low R
DSon
and low gate charge
•
Logic level gate operation
•
Avalanche rated, 100% tested
•
LFPAK provides maximum power density in a Power SO8 package
3. Applications
•
Synchronous rectifier in LLC topology
•
Chargers & adaptors with V
out
< 10 V
•
Fast charge & USB-PD applications
•
Battery powered motor control
•
LED lighting & TV backlight
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 60 V
I
D
drain current V
GS
= 5 V; T
mb
= 25 °C; Fig. 2 - - 86 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 147 W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 11
- 6 7.5 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge V
GS
= 10 V; I
D
= 20 A; V
DS
= 48 V;
T
j
= 25 °C; Fig. 13; Fig. 14
- 60.6 - nC
Q
GD
gate-drain charge V
GS
= 5 V; I
D
= 20 A; V
DS
= 48 V;
T
j
= 25 °C; Fig. 13; Fig. 14
- 9.7 - nC
