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PSMN7R5-60YLX

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
PSMN7R5-60YL
N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56
PSMN7R5-60YL All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 20 November 2015 3 / 13
Symbol Parameter Conditions Min Max Unit
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
= 25 °C - 86 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 346 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
= 86 A; V
sup
≤ 60 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
[1][2] - 76.5 mJ
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Refer to application note AN10273 for further information.
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
003aaj260
0 30 60 90 120 150 180
0
20
40
60
80
100
T
mb
(°C)
I
D
I
D
(A)(A)
Fig. 2. Continuous drain current as a function of
mounting base temperature
NXP Semiconductors
PSMN7R5-60YL
N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56
PSMN7R5-60YL All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 20 November 2015 4 / 13
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aaj261
10
-3
10
-2
10
-1
1 10
10
-1
1
10
10
2
t
AL
(ms)
I
AL
I
AL
(A)(A)
(1)(1)
(2)(2)
(3)(3)
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5 - - 1.02 K/W
NXP Semiconductors
PSMN7R5-60YL
N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56
PSMN7R5-60YL All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 20 November 2015 5 / 13
003aai628
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
-3
10
-2
10
-1
1
10
t
p
(s)
Z
th(j-mb)
Z
th(j-mb)
(K/W)(K/W)
P
t
t
p
T
t
p
δ =
T
single shotsingle shot
δ = 0.5δ = 0.5
0.20.2
0.10.1
0.050.05
0.020.02
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 60 - - VV
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C 54 - - V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 9; Fig. 10
1.4 1.7 2.1 V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 9
- - 2.45 V
V
GS(th)
gate-source threshold
voltage
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 9
0.5 - - V
V
DS
= 60 V; V
GS
= 0 V; T
j
= 175 °C - - 500 µAI
DSS
drain leakage current
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C - 0.05 10 µA
V
GS
= 16 V; V
DS
= 0 V; T
j
= 25 °C - 2 100 nAI
GSS
gate leakage current
V
GS
= -16 V; V
DS
= 0 V; T
j
= 25 °C - 2 100 nA
V
GS
= 5 V; I
D
= 20 A; T
j
= 25 °C; Fig. 11 - 6.8 8.7 mΩ
V
GS
= 10 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 11
- 6 7.5 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 20 A; T
j
= 175 °C;
Fig. 12; Fig. 11
- - 19.7 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
= 20 A; V
DS
= 48 V; V
GS
= 5 V;
T
j
= 25 °C; Fig. 13; Fig. 14
- 31 - nC
P1-P3P4-P6P7-P9P10-P12P13-P14

PSMN7R5-60YLX

Mfr. #:
Buy PSMN7R5-60YLX
Manufacturer:
Nexperia
Description:
MOSFET PSMN7R5-60YL/LFPAK/REEL 7" Q1/
Lifecycle:
New from this manufacturer.
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