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BG 5130R E6327

P1-P3P4-P6P7-P9P10-P10
2006-04-13
1
BG5130R
1
6
2
3
5
4
DUAL - N-Channel MOSFET Tetrode
• Low noise gain controlled input
stages of UHF-and VHF - tuners
with 3V up to 5V supply voltage
• Integrated gate protection diodes
• Low noise figure
• High gain, high forward transadmittance
• Improved cross modulation at gain reduction
• Biasing network partially integrated
BG5130R
G2
G1
GND
AGC
RF
Input
Drain
RF Output
+ DC
VGG
RG1
A
B
4
56
1 2 3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Pin Configuration Marking
BG5130R SOT363 1=G1* 2=S 3=D* 4=D** 5=G2 6=G1** KYs
* For amp. A; ** for amp. B
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage V
DS
8 V
Continuous drain current I
D
25 mA
Gate 1/ gate 2-source current ±I
G1/2SM
1
Gate 1/ gate 2-source voltage ±V
G1/G2S
6 V
Total power dissipation
T
S
≤ 78 °C
P
tot
200 mW
Storage temperature T
stg
-55 ... 150
°C
Channel temperature T
ch
150
2006-04-13
2
BG5130R
Thermal Resistance
Parameter Symbol Value Unit
Channel - soldering point
1)
R
thchs
≤ 280
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
I
D
= 1 µA, V
G1S
= 0 , V
G2S
= 0
V
(BR)DS
12 - - V
Gate1-source breakdown voltage
+I
G1S
= 10 mA, V
G2S
= 0 , V
DS
= 0
+V
(BR)G1SS
6 - 15
Gate2-source breakdown voltage
+I
G2S
= 10 mA, V
G1S
= 0 , V
DS
= 0
+V
(BR)G2SS
6 - 15
Gate1-source leakage current
V
G1S
= 6 V, V
G2S
= 0
+I
G1SS
- - 50 nA
Gate2-source leakage current
V
G2S
= 6 V, V
G1S
= 0 , V
DS
= 0
+I
G2SS
- - 50
Drain current
V
DS
= 3 V, V
G1S
= 0 , V
G2S
= 3 V
I
DSS
- - 100
Drain-source current
V
DS
= 3 V, V
G2S
= 3 V, R
G1
= 100 kΩ
I
DSX
- 10 - mA
Gate1-source pinch-off voltage
V
DS
= 3 V, V
G2S
= 3 V, I
D
= 20 µA
V
G1S(p)
- 0.6 - V
Gate2-source pinch-off voltage
V
DS
= 3 V, V
G1S
= 3 V, I
D
= 20 µA
V
G2S(p)
- 0.7 -
1
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2006-04-13
3
BG5130R
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
AC Characteristics - (verified by random sampling)
Forward transconductance
V
DS
= 3 V, V
G2S
= 3 V
g
fs
- 41 -
mS
Gate1 input capacitance
V
DS
= 3 V, V
G2S
= 3 V, f = 10 MHz
C
g1ss
- 2.7 - pF
Output capacitance
V
DS
= 3 V, V
G2S
= 3 V, f = 10 MHz
C
dss
- 1.6 -
Power gain
V
DS
= 3 V, I
D
= 10 mA, V
G2S
= 3 V,
f = 800 MHz
V
DS
= 3 V, I
D
= 10 mA, V
G2S
= 3 V,
f = 45 MHz
G
p
-
-
24
35
-
-
dB
Noise figure
V
DS
= 3 V, I
D
= 10 mA, V
G2S
= 3 V,
f = 800 MHz
V
DS
= 3 V, I
D
= 10 mA, V
G2S
= 3 V,
f = 45 MHz
F
-
-
1.3
1
-
-
dB
Gain control range
V
DS
= 3 V, V
G2S
= 3...0 V, f = 800 MHz
∆G
p
45 - -
Cross-modulation k=1%, f
w
=50MHz, f
unw
=60MHz
AGC = 0
AGC = 10 dB
AGC = 40 dB
X
mod
90
-
96
94
92
98
-
-
-
dB
P1-P3P4-P6P7-P9P10-P10

BG 5130R E6327

Mfr. #:
Buy BG 5130R E6327
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors DUAL - N-Channel MOSFET Tetrode
Lifecycle:
New from this manufacturer.
Delivery:
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