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BG 5130R E6327

P1-P3P4-P6P7-P9P10-P10
2006-04-13
4
BG5130R
Total power dissipation P
tot
= ƒ(T
S
)
0 20 40 60 80 100 120
°C
150
T
S
0
50
100
150
200
mW
300
P
tot
Drain current I
D
= ƒ(I
G1
)
V
G2S
= 3V
0 10 20 30 40
µA
60
I
G1
0
5
10
15
20
mA
30
I
D
Output characteristics I
D
= ƒ(V
DS
)
0 2 4 6 8
V
12
V
DS
0
2
4
6
8
10
12
14
16
18
mA
22
I
D
1.4V
1.3V
1.2V
1.1V
1V
Gate 1 current I
G1
= ƒ(V
G1S
)
V
DS
= 3V
V
G2S
= Parameter
0 0.5 1 1.5 2
V
3
V
G1S
0
50
100
µA
200
I
G1
3V
2.5V
2V
3.5v
4V
2006-04-13
5
BG5130R
Gate 1 forward transconductance
g
fs
= ƒ(I
D
)
V
DS
= 3V, V
G2S
= Parameter
0 5 10 15 20
mA
30
I
D
0
5
10
15
20
25
30
35
40
45
50
mS
60
G
fs
3V
2.5V
2V
1.5V
Drain current I
D
= ƒ(V
G1S
)
V
DS
= 3V
V
G2S
= Parameter
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
1.8
V
G1S
0
2
4
6
8
10
12
14
16
18
20
22
24
mA
28
I
D
3V
2.5V
2V
1.5V
1V
Drain current I
D
= ƒ(V
GG
)
V
DS
= 3V, V
G2S
= 3V, R
G1
= 68kΩ
(connected to V
GG
,
V
GG
=gate1 supply voltage)
0 1
V
3
V
GG
0
2
4
6
8
10
mA
14
I
D
Drain current I
D
= ƒ(V
GG
)
V
G2S
= 3V
R
G1
= Parameter in kΩ
0 1 2 3
V
5
V
GG
=V
DS
0
4
8
12
16
20
mA
28
I
D
82K
68K
56K
100K
47K
2006-04-13
6
BG5130R
Power gain G
ps
= ƒ (V
G2S
)
f = 45 MHz
0 1
V
3
V
G2S
-20
-10
0
10
20
dB
40
G
ps
Noise figure F = ƒ (V
G2S
)
f = 45 MHz
0 1
V
3
V
G2S
0
2
4
dB
8
F
Power gain G
ps
= ƒ (V
G2S
)
f = 800 GHz
0 1
V
3
V
G2S
-20
-10
0
10
dB
30
G
ps
Noise figure F = ƒ (V
G2S
)
f = 800 MHz
0 1
V
3
V
G2S
1
2
3
4
5
dB
7
F
P1-P3P4-P6P7-P9P10-P10

BG 5130R E6327

Mfr. #:
Buy BG 5130R E6327
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors DUAL - N-Channel MOSFET Tetrode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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