BG 5130R E6327

2006-04-13
7
BG5130R
Crossmodulation V
unw
= (AGC)
V
DS
= 3 V, R
g1
= 68 k
0 5 10 15 20 25 30 35 40
dB
50
AGC
85
90
95
100
105
dBµV
115
V
unw
2006-04-13
8
BG5130R
Crossmodulation test circuit
RG1
4n7
4n7
RL
50
50
R
GEN
50
V
GG
R1
10k
V
AGC
V
DS
4n7
4n7
2.2 uH
Semibiased
2006-04-13
9
BG5130R
Package SOT363
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
Pin 1 marking
Laser marking
0.3
0.70.9
0.65
0.65
1.6
0.2
4
2.15
1.1
8
2.3
Pin 1
marking
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
0.15
±0.1
1.25
0.1 MAX.
0.9
±0.1
A
-0.05
6x
0.1
M
0.650.65
2.1
±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking

BG 5130R E6327

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors DUAL - N-Channel MOSFET Tetrode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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