BUK7640-100A,118 Datasheet BUK7640-100A,118 | P1-P3

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

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use http://www.nexperia.com

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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

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Team Nexperia

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 AEC Q101 compliant  Low conduction losses due to low

on-state resistance

1.3 Applications

 Automotive and general purpose

power switching

1.4 Quick reference data

BUK7640-100A

N-channel TrenchMOS standard level FET

Rev. 2 — 20 April 2011 Product data sheet

D2PAK

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175°C --100V

drain current T

=25°C --37A

tot

total power dissipation - - 138 W

Static characteristics

DSon

drain-source on-state

resistance

=10V; I

=25A;

=25°C

- 3040mΩ

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source

avalanche energy

=26A; V

sup

≤ 25 V;

=50Ω; V

=10V;

j(init)

= 25 °C; unclamped

--31mJ

Product data sheet Rev. 2 — 20 April 2011 2 of 12

NXP Semiconductors

BUK7640-100A

N-channel TrenchMOS standard level FET

2. Pinning information

[1] drain (D)

3. Ordering information

4. Limiting values

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

SOT404 (D2PAK)

2 D drain

[1]

3Ssource

mb D mounting base;

connected to drain

bb076

Table 3. Ordering information

Type number Package

Name Description Version

BUK7640-100A D2PAK plastic single-ended surface-mounted package (D2PAK);

3 leads (one lead cropped)

SOT404

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C - 100 V

DGR

drain-gate voltage R

=20kΩ - 100 V

gate-source voltage -20 20 V

drain current T

=25°C - 37 A

=100°C - 26 A

peak drain current T

= 25 °C; pulsed - 149 A

tot

total power dissipation T

= 25 °C - 138 W

stg

storage temperature -55 175 °C

junction temperature -55 175 °C

Source-drain diode

source current T

=25°C - 37 A

peak source current pulsed; T

= 25 °C - 149 A

Avalanche ruggedness

DS(AL)S

non-repetitive drain-source

avalanche energy

=26A; V

sup

≤ 25 V; R

=50Ω;

=10V; T

j(init)

= 25 °C; unclamped

-31mJ

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

BUK7640-100A,118

Mfr. #:

Buy BUK7640-100A,118

Manufacturer:

Nexperia

Description:

MOSFET TAPE13 PWR-MOS

Lifecycle:

New from this manufacturer.

Delivery:

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BUK7640-100A,118