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BUK7640-100A,118

P1-P3P4-P6P7-P9P10-P12P13-P13
BUK7640-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 3 of 12
NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
V
GS
≥ 10 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
T
mb
= 25 °C; I
DM
is single pulse
I
D
= 75 A
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
Fig 4. Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
40
60
20
80
100
P
der
(%)
0
T
mb
(°C)
0 20015050 100
003aaf471
40
60
20
80
100
I
D
(%)
0
T
mb
(°C)
0 20015050 100
003aaf586
V
DS
(V)
110
3
10
2
10
003aaf587
10
2
10
10
3
I
D
(A)
1
DC
100 ms
10 ms
1 ms
10 μs
100 μs
tp = 1 μs
R
DS(on)
= V
DS
/ I
D
40
60
20
80
100
W
DSS
(%)
0
T
mb
(°C)
20 18014060 100
003aaf600
BUK7640-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 4 of 12
NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
unclamped inductive load
Fig 5. Single-shot avalanche rating; avalanche current as a function of avalanche period
003aaf601
t
AV
(ms)
10
−3
10110
−2
10
−1
10
10
2
l
AV
(A)
1
25 °C
T
j
prior to avalanche = 150 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from
junction to mounting base
--1.1K/W
R
th(j-a)
thermal resistance from
junction to ambient
minimum footprint; FR4 board - 50 - K/W
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aaf588
t (s)
10
−7
1010
−1
10
−5
10
−3
10
−2
10
−1
1
10
Z
th(j-mb)
(K/W)
10
−3
t
p
t
p
T
P
t
T
δ =
δ = 0.5
0.2
0.1
0.05
0.02
0
BUK7640-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 5 of 12
NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
= -55 °C 89 - - V
I
D
=0.25mA; V
GS
=0V; T
j
= 25 °C 100 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C 234V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C --4.4V
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C 1 - - V
I
DSS
drain leakage current V
DS
=100V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=100V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
= 175 °C - - 108 mΩ
V
GS
=10V; I
D
=25A; T
j
= 25 °C - 30 40 mΩ
Dynamic characteristics
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C
- 1720 2293 pF
C
oss
output capacitance - 216 259 pF
C
rss
reverse transfer
capacitance
- 133 182 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=10V;
R
G(ext)
=10Ω; T
j
=25°C
- 1218ns
t
r
rise time - 55 83 ns
t
d(off)
turn-off delay time - 48 67 ns
t
f
fall time - 3042ns
L
D
internal drain
inductance
measured from upper edge of drain tab
to centre of die; T
j
=25°C
-2.5-nH
L
S
internal source
inductance
measured from source lead soldering
point to source bond pad; T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
= 25 °C - 0.85 1.2 V
I
S
=37A; V
GS
=0V; T
j
=25°C - 1.1 - V
t
rr
reverse recovery time I
S
=37A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-70-ns
Q
r
recovered charge - 0.24 - µC
P1-P3P4-P6P7-P9P10-P12P13-P13

BUK7640-100A,118

Mfr. #:
Buy BUK7640-100A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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