BUK7640-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 6 of 12
NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
T
j
= 25 °C T
j
= 25 °C
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
T
j
= 25 °C; I
D
= 25 A V
DS
> I
D
x R
DSon
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
= 25 °C; V
DS
> I
D
x R
DSon
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
20
30
10
40
50
I
D
(A)
0
V
DS
(V)
0 2.01.60.8 1.20.4
003aaf589
V
GS
(V) = 10
8
6
5.4
4.8
5.2
5
4.4
4.6
0.02
0.08
0.06
0.04
0.1
R
DS(on)
(Ω)
I
D
(A)
0504020 3010
003aaf590
V
GS
(V) = 10
6
8
5.45.254.8
30
34
38
R
DS(on)
(Ω)
26
V
GS
(V)
15423
0
30
20
10
40
I
D
(A)
V
GS
(V)
08624
T
j
= 25 °C T
j
= 175 °C
0
60
40
20
80
g
fs
(S)
I
D
(A)
0403010 20
003aaf593
003aaf594
T
mb
(°C)
−100 2001000
1.5
2
1
2.5
3
a
0.5
