BGA123L4E6327XTSA1

Data Sheet 4 Revision 2.0 (min/max)
2017-09-14
BGA123L4
Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation
Features
Description
The BGA123L4 is a ultra low current low noise amplifier for Global Navigation Satellite Systems (GNSS) which
covers all GNSS frequency bands from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The
LNA provides 18.2 dB gain and 0.75 dB noise figure at a current consumption of only 1.1 mA in the application
configuration described in Chapter 4. The BGA123L4 is based upon Infineon Technologies‘ B7HF Silicon
Germanium technology. It operates from 1.1 V to 3.6 V supply voltage.
Pin Definition and Function
Table 1 Pin Definition and Function
Pin No. Name Function
1 VCC DC supply
2 AO LNA output
3GNDGround
4AI LNA input
Data Sheet 5 Revision 2.0 (min/max)
2017-09-14
BGA123L4
Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation
Maximum Ratings
2 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit. Exposure to conditions at or below absolute
maximum rating but above the specified maximum operation conditions may affect device
reliability and life time. Functionality of the device might not be given under these conditions.
Table 2 Maximum Ratings
Parameter Symbol Values Unit Note or
Test Condition
Min. Typ. Max.
Voltage at pin VCC V
CC
-0.3 3.6 V
1)
1) All voltages refer to GND-Node unless otherwise noted
Voltage at pin AI V
AI
-0.3 0.9 V
Voltage at pin AO V
AO
-0.3 V
CC
+ 0.3 V
Voltage at pin GND V
GND
-0.3 0.3 V
Current into pin VCC I
CC
––10mA
RF input power P
IN
––0dBm
Total power dissipation,
T
S
< 148 °C
2)
2) T
S
is measured on the ground lead at the soldering point
P
tot
––40mW
Junction temperature T
J
150 °C
Ambient temperature range T
A
-40 85 °C
Storage temperature range T
STG
-65 150 °C
ESD capability all pins V
ESD_HBM
-2000 2000 V according to
JS-001
Data Sheet 6 Revision 2.0 (min/max)
2017-09-14
BGA123L4
Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation
Electrical Characteristics
3 Electrical Characteristics
Table 3 Electrical Characteristics
1)
T
A
= 25 °C, V
CC
= 1.2 V, f = 1550 - 1615 MHz
1) Based on the application described in chapter 4
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Supply voltage V
CC
1.1 1.8 3.6 V ON-Mode
0.0 0.4 V OFF-Mode
Supply current I
CC
1.05 1.55 mA ON-Mode, Vcc=1.2V
0.1 2 µA OFF-Mode
Insertion power gain
f = 1575 MHz
|S
21
|
2
16.4 17.9 19.4 dB ON-Mode
Noise figure
2)
f = 1575 MHz, Z
S
=50Ω
2) PCB losses are subtracted
NF 0.75 1.25 dB ON-Mode, Z
S
= 50 Ω
Input return loss
3)
f = 1575 MHz
3) Verification based on AQL; not 100% tested in production
RL
IN
79–dBON-Mode
Output return loss
3)
f = 1575 MHz
RL
OUT
10 16 dB ON-Mode
Reverse isolation
3)
f = 1575 MHz
1/|S
12
|
2
25 36 dB ON-Mode
Transient time
4)7)
4) To be within 1 dB of the final gain
t
S
0.5 2 µs ON- to OFF-Mode
9 12 µs OFF- to ON-Mode
Inband input 1dB-compression
point, f = 1575 MHz
3)
IP
1dB
-21 -17 dBm ON-Mode
Inband input 3
rd
-order
intercept point
3)5)
f
1
= 1575 MHz, f
2
= f
1
+/- 1 MHz
5) Input power = -30 dBm for each tone
IIP
3
-19 -14 dBm ON-Mode
Out of band input 3
rd
-order
intercept
point
3)6)
f
1
= 1713 MHz, f
2
= 1851
MHz
6) Input power = -20 dBm at f
1
and -65 dBm at f
2
OOB-IIP
3
-14 -9 dBm ON-Mode
Stability
7)
7) Guaranteed by device design; not tested in production
k > 1 f=20MHz ... 10GHz

BGA123L4E6327XTSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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