BGA123L4E6327XTSA1

Data Sheet 7 Revision 2.0 (min/max)
2017-09-14
BGA123L4
Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation
Electrical Characteristics
Table 4 Electrical Characteristics
1)
T
A
= 25 °C, V
CC
= 1.8 V, f = 1550 - 1615 MHz
1) Based on the application described in chapter 4
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Supply voltage V
CC
1.1 1.8 3.6 V ON-Mode
0.0 0.4 V OFF-Mode
Supply current I
CC
1.1 1.6 mA ON-Mode, Vcc=1.8V
0.1 2 µA OFF-Mode
Insertion power gain
f = 1575 MHz
|S
21
|
2
16.7 18.2 19.7 dB ON-Mode
Noise figure
2)
f = 1575 MHz, Z
S
=50Ω
2) PCB losses are subtracted
NF 0.75 1.25 dB ON-Mode, Z
S
= 50 Ω
Input return loss
3)
f = 1575 MHz
3) Verification based on AQL; not 100% tested in production
RL
IN
79–dBON-Mode
Output return loss
3)
f = 1575 MHz
RL
OUT
10 16 dB ON-Mode
Reverse isolation
3)
f = 1575 MHz
1/|S
12
|
2
25 36 dB ON-Mode
Transient time
4)7)
4) To be within 1 dB of the final gain
t
S
0.5 2 µs ON- to OFF-Mode
–69µsOFF- to ON-Mode
Inband input 1dB-compression
point, f = 1575 MHz
3)
IP
1dB
-19 -15 dBm ON-Mode
Inband input 3
rd
-order
intercept point
3)5)
f
1
= 1575 MHz, f
2
= f
1
+/- 1 MHz
5) Input power = -30 dBm for each tone
IIP
3
-19 -14 dBm ON-Mode
Out of band input 3
rd
-order
intercept
point
3)6)
f
1
= 1713 MHz, f
2
= 1851
MHz
6) Input power = -20 dBm at f
1
and -65 dBm at f
2
OOB-IIP
3
-14 -9 dBm ON-Mode
Stability
7)
7) Guaranteed by device design; not tested in production
k > 1 f=20MHz ... 10GHz
Data Sheet 8 Revision 2.0 (min/max)
2017-09-14
BGA123L4
Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation
Electrical Characteristics
Table 5 Electrical Characteristics
1)
T
A
= 25 °C, V
CC
= 2.8 V, f = 1550 - 1615 MHz
1) Based on the application described in chapter 4
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Supply voltage V
CC
1.1 1.8 3.6 V ON-Mode
0.0 0.4 V OFF-Mode
Supply current I
CC
1.2 1.7 mA ON-Mode, Vcc=2.8V
0.1 2 µA OFF-Mode
Insertion power gain
f = 1575 MHz
|S
21
|
2
16.9 18.4 19.9 dB ON-Mode
Noise figure
2)
f = 1575 MHz, Z
S
=50Ω
2) PCB losses are subtracted
NF 0.75 1.25 dB ON-Mode, Z
S
= 50 Ω
Input return loss
3)
f = 1575 MHz
3) Verification based on AQL; not 100% tested in production
RL
IN
79–dBON-Mode
Output return loss
3)
f = 1575 MHz
RL
OUT
10 15 dB ON-Mode
Reverse isolation
3)
f = 1575 MHz
1/|S
12
|
2
25 36 dB ON-Mode
Transient time
4)7)
4) To be within 1 dB of the final gain
t
S
0.5 2 µs ON- to OFF-Mode
–58µsOFF- to ON-Mode
Inband input 1dB-compression
point, f = 1575 MHz
3)
IP
1dB
-17 -13 dBm ON-Mode
Inband input 3
rd
-order
intercept point
3)5)
f
1
= 1575 MHz, f
2
= f
1
+/- 1 MHz
5) Input power = -30 dBm for each tone
IIP
3
-19 -14 dBm ON-Mode
Out of band input 3
rd
-order
intercept
point
3)6)
f
1
= 1713 MHz, f
2
= 1851
MHz
6) Input power = -20 dBm at f
1
and -65 dBm at f
2
OOB-IIP
3
-14 -9 dBm ON-Mode
Stability
7)
7) Guaranteed by device design; not tested in production
k > 1 f=20MHz ... 10GHz
Data Sheet 9 Revision 2.0 (min/max)
2017-09-14
BGA123L4
Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation
Application Information
4 Application Information
Application Board Configuration
Figure 2 Application Schematic BGA123L4
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes
Table 6 Bill of Materials
Name Value Package Manufacturer Function
C1 (optional) 1nF 0402 Various DC block
1)
1) DC block might be realized with pre-filter in GNSS applications
C2 1nF
2)
2) For data sheet charcteristics 1nF used
0402 Various RF bypass
3)
3) RF bypass recommended to mitigate power supply noise
L1 10nH 0402 Murata LQW15 type Input matching
N1 BGA123L4 TSLP-4-11 Infineon SiGe LNA
N1 BGA123L4
GND, 3
AI, 4
VCC, 1
AO, 2
C1
RFin
VCC
C2
RFoutGND
L1
BGA123L4_Schematic.vsd

BGA123L4E6327XTSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
Lifecycle:
New from this manufacturer.
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