IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1X200N60B3H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 60A, V
CE
= 10V, Note 1 27 45 S
C
ie
s
9970 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 570 pF
C
res
183 pF
Q
g(on)
315 nC
Q
ge
I
C
= 200A, V
GE
= 15V, V
CE
= 0.5 • V
CES
98 nC
Q
gc
130 nC
t
d(on)
48 ns
t
ri
100 ns
E
on
2.85 mJ
t
d(off)
160 ns
t
fi
110 ns
E
of
f
2.90 4.40 mJ
t
d(on)
46 ns
t
ri
94 ns
E
on
4.40 mJ
t
d(off)
180 ns
t
fi
215 ns
E
off
3.45 mJ
R
thJC
0.24 °C/W
R
thCS
0.05 °C/W
Inductive load, T
J
= 150°C
I
C
= 100A, V
GE
= 15V
V
CE
= 360V, R
G
= 1Ω
Note 3
Inductive load, T
J
= 25°C
I
C
= 100A, V
GE
= 15V
V
CE
= 360V, R
G
= 1Ω
Note 3
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp I
CES
measurement.
3. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 100A, V
GE
= 0V, Note 1 2.5 V
T
J
= 150°C 2.3 V
I
RM
95 A
t
rr
100 ns
R
thJC
0.83 °C/W
I
F
= 100A, V
GE
= 0V, T
J
= 150°C
-di
F
/dt = 1500A/μs, V
R
= 300V
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
