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MMIX1X200N60B3H1

P1-P3P4-P6P7-P8
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1X200N60B3H1
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
50
100
150
200
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
10V
8V
9V
7V
5V
11V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 100A
I
C
= 150A
I
C
= 200A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 200
A
T
J
= 25ºC
100
A
150
A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
4567891011
V
GE
- Volts
I
C
-
Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
11V
10V
8V
9V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
02468101214
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
13V
10V
11V
12V
8V
7V
9V
© 2013 IXYS CORPORATION, All Rights Reserved
MMIX1X200N60B3H1
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC, 25ºC, 150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
50
100
150
200
250
300
350
400
450
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 1
Ω
dv / dt < 10V / ns
Fig. 12. Maximum Transient Thermal Impedance
0.0001
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280 320
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 200A
I
G
= 10mA
Fig. 9. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 11. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
10ms
V
CE(sat)
Limit
DC
100µs
25µs
100ms
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1X200N60B3H1
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12345678910
R
G
- Ohms
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 360V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
160
200
240
280
320
360
12345678910
R
G
- Ohms
t
f i
- Nanoseconds
100
200
300
400
500
600
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 360V
I
C
= 100A
I
C
= 50A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1.5
2.0
2.5
3.0
3.5
4.0
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω
,
V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
1.5
2.0
2.5
3.0
3.5
4.0
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
3
4
5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω
,
V
GE
= 15V
V
CE
= 360V
I
C
= 50A
I
C
= 100A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
60
100
140
180
220
260
300
340
380
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
120
140
160
180
200
220
240
260
280
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
50
100
150
200
250
300
350
400
450
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
120
140
160
180
200
220
240
260
280
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 360V
I
C
= 100A
I
C
= 50A
P1-P3P4-P6P7-P8

MMIX1X200N60B3H1

Mfr. #:
Buy MMIX1X200N60B3H1
Manufacturer:
Littelfuse
Description:
IGBT Transistors SMPD IGBTs Power Device
Lifecycle:
New from this manufacturer.
Delivery:
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