Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS75033A 10/11
Data Sheet
www.microchip.com
Features
• High Gain:
– Typically 29 dB gain across 2.4–2.5 GHz over tempera-
ture 0°C to +85°C
• High linear output power:
– >26 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 22 dBm
– ~2.5% added EVM up to 19 dBm for 54 Mbps 802.11g
signal
– Meets 802.11b ACPR requirement up to 22 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~22%/220 mA @ P
OUT
= 22 dBm for 802.11g
– ~21%/230 mA @ P
OUT
= 22 dBm for 802.11b
• Single-pin low I
REF
power-up/down control
–I
REF
<2 mA
• Low idle current
– ~70 mA I
CQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• Excellent On-chip power detection
– <+/- 0.3dB variation between 0°C to +85°C
– <+/- 0.4dB variation with 2:1 VSWR mismatch
– <+/- 0.3dB variation Ch1 through Ch14
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. Easily configured for high-power applications with good
power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, the
SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output
power, while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 fea-
tures easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin, and is offered in a 16-contact
VQFN package.
