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SST12LP07-QVCE-MM007

P1-P3P4-P6P7-P9P10-P12P13-P15
©2011 Silicon Storage Technology, Inc. DS75033A 10/11
10
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A
Microchip Technology Company
Figure 8: 802.11g Spectrum Mask at 22 dBm
Figure 9: Detector Characteristics Over Temperature and Over Frequency
-70
-60
-50
-40
-30
-20
-10
0
10
2.3 5 2.4 0 2 .45 2 .50 2 .5 5
Freq = 2.412 GHZ
Freq = 2.442 GHz
Freq = 2.484 GHz
Frequency (GHz)
1321 F8.0
Amplitude (dB)
Detector Voltage versus Output Power
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
Detector Voltage (V)
Freq = 2.412 GHz (25°C)
Freq = 2.442 GHz (25°C)
Freq = 2.484 GHz (25°C)
Freq = 2.412 GHz (0°C)
Freq = 2.442 GHz (0°C)
Freq = 2.484 GHz (0°C)
Freq = 2.412 GHz (85°C)
Freq = 2.442 GHz (85°C)
Freq = 2.484 GHz (85°C)
1321 F9.1
©2011 Silicon Storage Technology, Inc. DS75033A 10/11
11
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A
Microchip Technology Company
Figure 10: CH7 Detector Characteristics Over Temperature with 2:1 Output VSWR All Phases
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, 1 Mbps 802.11B CCK signal
Figure 11:802.11B Spectrum Mask at 22 dBm
Detector Voltage versus Output Power
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
Detector Voltage (V)
Freq = 2.442 GHz (0°C)
Freq = 2.442 GHz (25°C)
Freq = 2.442 GHz (85°C)
Freq = 2.442 GHz (Max)
Freq = 2.442 GHz (Min)
1321 F10.1
-80
-70
-60
-50
-40
-30
-20
-10
0
10
2.35 2. 40 2.45 2. 50 2.55
Freq = 2.412 GHZ
Freq = 2.442 GHz
Freq = 2.484 GHz
Frequency (GHz)
Amplitude (dB)
1321 F11.0
©2011 Silicon Storage Technology, Inc. DS75033A 10/11
12
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A
Microchip Technology Company
Figure 12:Typical Schematic for High-Power/High-Efficiency 802.11b/g Applications
50 Ω / 0–20 mil
RF
OUT
47 pF
2.0 pF
50Ω / 60–70 mil
RF
IN
10 µF
22 pF
V
CC
6.8 nH
0.1 µF
Det
10 pF
1321 Schematic 1.1
Suggested operation conditions:
1. V
CC
= 3.3V
2. Center slug to RF ground
3. VREG = 2.85V with R1=110Ω
Suggested for robustness under input overdrive condition
when working with some transceivers.
47pF
0.1 µF
R2=50Ω
2
56 8
16 15
1
14
49
11
12
10
13
3
Bias Circuit
7
0.1 µF
R1 = 110 Ω
VREG
1.5 nH
P1-P3P4-P6P7-P9P10-P12P13-P15

SST12LP07-QVCE-MM007

Mfr. #:
Buy SST12LP07-QVCE-MM007
Manufacturer:
Microchip Technology
Description:
RF Amplifier 2.4-2.5GHz 3.3V 250mA ICC 802.11 b/g
Lifecycle:
New from this manufacturer.
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