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MRF13750HR5

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
MRF13750H MRF13750HS
1
RF Device Data
NXP Semiconductors
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 750 W CW transistors are designed for industrial, scientific and
medical (ISM) applications in the 700 to 1300 MH z frequency range. The
transistors are capable of CW or pulse power in narrowband operation.
Typical Performance:
V
DD
=50Vdc
Frequency
(MHz)
Signal Type
P
out
(W)
G
ps
(dB)
D
(%)
915
(1)
CW 750 19.3 67.1
915
(2)
Pulse
(100 sec, 10% Duty Cycle)
850 20.5 69.2
1300
(3)
CW 700 17.2 56.0
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type VSWR
P
in
(W)
Test
Voltage
Result
915
(2)
Pulse
(100 sec, 10%
Duty Cycle)
> 10:1 at all
Phase
Angles
15.9 Peak
(3 dB
Overdrive)
50 No Device
Degradation
1. Measured in 915 MHz narrowband reference circuit (page 5).
2. Measured in 915 MHz narrowband production test fixture (page 11).
3. Measured in 1300 MHz narrowband reference circuit (page 8).
Features
Internally input pre--matched for ease of use
Device can be used single--ended or in a push--pull configuration
Characterized for 30 to 50 V
Suitable for linear applications with appropriate biasing
Integrated ESD protection
Recommended driver: MRFE6VS25GN (25 W)
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
915 MHz industrial heating/welding systems
1300 MHz particle accelerators
Document Number: MRF13750H
Rev. 1, 01/2018
NXP Semiconductors
Technical Data
700–1300 MHz, 750 W CW, 50 V
RF POWER LDMOS TRANSISTORS
MRF13750H
MRF13750HS
(Top View)
Drain A
31
Figure 1. Pin Connections
42
Drain B
Gate A
Gate B
Note: The backside of the package is the
source terminal for the transistor.
NI--1230H--4S
MRF13750H
NI--1230S--4S
MRF13750HS
2017–2018 NXP B.V.
2
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
–0.5, +105 Vdc
Gate--Source Voltage V
GS
–6.0, +10 Vdc
Operating Voltage V
DD
55, +0 Vdc
Storage Temperature Range T
stg
–65 to +150 C
Case Operating Temperature Range T
C
–40 to +150 C
Operating Junction Temperature Range
(1,2)
T
J
–40 to +225 C
Total Device Dissipation @ T
C
=25C
Derate above 25C
P
D
1333
6.67
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 82C, 700 W CW, 50 Vdc, I
DQ(A+B)
= 150 mA, 915 MHz
R
JC
0.15 C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 76C, 850 W Peak, 100 sec Pulse Width,
10% Duty Cycle, 50 Vdc, I
DQ(A+B)
= 200 mA, 915 MHz
Z
JC
0.014 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Charge Device Model (per JESD22--C101) C3, passes 1200 V
Table 4. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 Adc
Drain--Source Breakdown Voltage
(V
GS
=0Vdc,I
D
=10A)
V
(BR)DSS
105 — — Vdc
Zero Gate Voltage Drain Leakage Current
(V
DS
=55Vdc,V
GS
=0Vdc)
I
DSS
— — 1 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 105 Vdc, V
GS
=0Vdc)
I
DSS
— — 10 Adc
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
=10Vdc,I
D
= 275 Adc)
V
GS(th)
1.3 1.72 2.3 Vdc
Gate Quiescent Voltage
(V
DD
=50Vdc,I
DQ(A+B)
= 200 mAdc, Measured in Functional Test)
V
GS(Q)
1.7 2.2 2.7 Vdc
Drain--Source On--Voltage
(4)
(V
GS
=10Vdc,I
D
=2.8Adc)
V
DS(on)
0.1 0.23 0.6 Vdc
Dynamic Characteristics
(4,5)
Reverse Transfer Capacitance
(V
DS
=50Vdc 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
rss
— 1.94 — pF
Output Capacitance
(V
DS
=50Vdc 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
oss
— 63.8 — pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators
.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF
and search for AN1955.
4. Each side of device measured separately.
5. Part internally input pre--matched.
(continued)
MRF13750H MRF13750HS
3
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) V
DD
=50Vdc,I
DQ(A+B)
= 200 mA, P
out
= 850 W Peak
(85 W Avg.), f = 915 MHz, 100 sec Pulse Width, 10% Duty Cycle
Power Gain
G
ps
19.5 20.5 21.5 dB
Drain Efficiency
D
66.0 69.2 — %
Table 5. Load Mismatch/Ruggedness (In NXP Narrowband Production Test Fixture, 50 ohm system) I
DQ(A+B)
= 200 mA
Frequency
(MHz)
Signal Type VSWR
P
in
(W) Test Voltage, V
DD
Result
915 Pulse
(100 sec, 10% Duty Cycle)
> 10:1 at all
Phase Angles
15.9 Peak
(3 dB Overdrive)
50 No Device Degradation
Table 6. Ordering Information
Device Tape and Reel Information Package
MRF13750HR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--1230H--4S
MRF13750HSR5 NI--1230S--4S
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

MRF13750HR5

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Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors RF Power LDMOS Transistor 750 W
Lifecycle:
New from this manufacturer.
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