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MRF13750HR5

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
4
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
TYPICAL CHARACTERISTICS
1000 –1.854
Slope (mV/C)
I
DQ
(mA)
1
100
02010
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
10
Measured with 30 mV(rms)ac @ 1 MHz
V
GS
=0Vdc
Note: Each side of device measured separately.
10000
30 40 50
1000
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
NORMALIZED V
GS(Q)
T
C
, CASE TEMPERATURE (C)
1.06
1.04
1.02
1
0.98
0.96
0.94
100–50 0–25 25 50 75
V
DD
=50Vdc
200
500
750
0.92
1.08
C
oss
C
rss
I
DQ(A+B)
= 200 mA
500 mA
750 mA
1000 mA
–2.168
–1.992
–1.903
250
10
8
90
T
J
, JUNCTION TEMPERATURE (C)
10
6
10
5
10
4
110 130 150 170 190
MTTF (HOURS)
210 230
10
7
V
DD
=50Vdc
26.2 Amps
22.3 Amps
I
D
= 17.3 Amps
Figure 4. MTTF versus Junction Temperature – CW
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.nxp.com/RF/calculators
.
MRF13750H MRF13750HS
5
RF Device Data
NXP Semiconductors
915 MHz NARROWBAND REFERENCE CIRCUIT – 3.03.8 (7.6 cm 9.7 cm)
Table 7. 915 MHz Narrowband Performance (In NXP Reference Circuit, 50 ohm system)
V
DD
=50Vdc,I
DQ(A+B)
= 150 mA, P
in
=8.8W
Frequency
(MHz)
Signal
Type
P
out
(W)
G
ps
(dB)
D
(%)
915 CW 750 19.3 67.1
6
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
915 MHz NARROWBAND REFERENCE CIRCUIT – 3.03.8 (7.6 cm 9.7 cm)
Figure 5. MRF13750H Narrowband Reference Circuit Component Layout – 915 MHz
*C2, C3 and C4 are mounted vertically.
C5
C7
R1
R11
R2
C6
C8
R3
C15 R7
R6
R4
R5
U1
R9
R8
C14
C13
C11C9
C2*
C3*
C4*
C10 C12
R10
Q2
C1
Rev. 0D94455
Q1
Table 8. MRF13750H Narrowband Reference Circuit Component Designations and Values – 915 MHz
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5, C6, C11, C12 47 pF Chip Capacitor ATC100B470JT500XT ATC
C7, C8, C15 1 F Chip Capacitor GRM21BR71H105KA12L Murata
C9, C10 1000 pF Chip Capacitor ATC100B102JT50XT ATC
C13, C14 470 F, 100 V Electrolytic Capacitor MCGPR100V477M16X32--RH Multicomp
Q1 RF Power LDMOS Transistor MRF13750H NXP
Q2 NPN Bipolar Transistor BC847ALT1G ON Semiconductor
R1, R2 10  1/4 W Chip Resistor CRCW120610R0JNEA Vishay
R3 5k Multi--turn Cermet Trimmer Potentiometer 3224W--1--502E Bourns
R4 20 k 1/10 W Chip Resistor RR1220P--203--B--T5 Susumu
R5 4.7 k 1/10 W Chip Resistor RR1220P--472--D Susumu
R6, R8 1.2 k 1/8 W Chip Resistor CRCW08051K20FKEA Vishay
R7 10  1/8 W Chip Resistor CRCW080510R0FKEA Vishay
R9 2.2 k 1/8 W Chip Resistor CRCW08052K20JNEA Vishay
R10 4.7 k 1/2 W Chip Resistor CRCW12104K70FKEA Vishay
R11 2  1/2 W Chip Resistor ERJ--14YJ2R0U Panasonic
U1 Voltage Regulator 5 V, Micro8 LP2951ACDMR2G ON Semiconductor
PCB Rogers TC600, 0.025”,
r
=6.15 D94455 MTL
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

MRF13750HR5

Mfr. #:
Buy MRF13750HR5
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors RF Power LDMOS Transistor 750 W
Lifecycle:
New from this manufacturer.
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