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MRF13750HR5

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
10
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
TYPICAL CHARACTERISTICS – 1300 MHz
NARROWBAND REFERENCE CIRCUIT
P
in
, INPUT POWER (WATTS)
500
400
P
out
, OUTPUT POWER (WATTS)
300
201612084
600
700
0
800
V
DD
=50Vdc,I
DQ(A+B)
= 150 mA, f = 1300 MHz
200
100
1300 600 710
f
(MHz)
P1dB
(W)
P3dB
(W)
Figure 10. CW Output Power versus Input Power
P
out
, OUTPUT POWER (WATTS)
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
G
ps
, POWER GAIN (dB)
D,
DRAIN EFFICIENCY (%)
17.5
17
19
0 100
55
45
35
25
20
D
G
ps
16
16.5
18
18.5
19.5
50
40
30
20
60
V
DD
=50Vdc,I
DQ(A+B)
= 150 mA, f = 1300 MHz
200 300 400 500 600 700 800
f
MHz
Z
source
Z
load
1300 0.64 + j1.92 0.39 + j0.92
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Figure 12. Narrowband Series Equivalent Source and Load Impedance – 1300 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z
source
Z
load
50
50
MRF13750H MRF13750HS
11
RF Device Data
NXP Semiconductors
915 MHz NARROWBAND PRODUCTION TEST FIXTURE – 4.06.0 (10.2 cm 15.2 cm)
C20*
C21*
C16*
Figure 13. MRF13750H Narrowband Production Test Fixture Component Layout – 915 MHz
*C14, C15, C16, C17, C18, C19, C20 and C21 are mounted vertically.
C2
C17*
C23
C4
C6
C8
R2
C13
L2
C14*
C15*
C18*
C19*
C12
L1
C11
R1
C7
C1
C5
C3
C24
C25
C9
C10
B2
C22
C27 C29
C26 C28
B1
CUT OUT AREA
Rev. 0
D87851
Coax1
Coax2
Coax3
Coax4
Table 11. MRF13750H Narrowband Production Test Fixture Component Designations and Values – 915 MHz
Part Description Part Number Manufacturer
B1, B2 RF Bead, Short 2743019447 Fair--Rite
C1, C2 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C3, C4 2.2 F Chip Capacitor C1825C225J5RAC Kemet
C5, C6 0.1 F Chip Capacitor CDR33BX104AKWS AVX
C7, C8, C22, C23 36 pF Chip Capacitor ATC100B360JT500XT ATC
C9, C10 10 pF Chip Capacitor ATC100B100JT500XT ATC
C11 13 pF Chip Capacitor ATC100B130JT500XT ATC
C12, C13 12 pF Chip Capacitor ATC100B120JT500XT ATC
C14, C15 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC
C16, C17, C18, C19, C20, C21 36 pF Chip Capacitor ATC100B360JT500XT ATC
C24, C25 0.01 F Chip Capacitor C1825C103K1GAC--TU Kemet
C26, C27, C28, C29 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp
Coax1, 2, 3, 4 25 , Semi Rigid Coax, 2.2 Shield Length UT--141C--25 Micro Coax
L1, L2 5 nH Inductor A02TKLC Coilcraft
R1, R2 10 , 3/4 W Chip Resistor CRCW201010R0FKEF Vishay
PCB Arlon, AD255A, 0.03,
r
=2.55 D87851 MTL
12
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
TYPICAL CHARACTERISTICS – 915 MHz, T
C
=25_C
PRODUCTION TEST FIXTURE
56
54
48
52
38363428 3230
58
60
26
50
62
P
in
, INPUT POWER (dBm)
P
out
, OUTPUT P OWER (dBm) PEAK
0
V
GS
, GATE--SOURCE VOLTAGE (VOLTS)
Figure 14. Output Power versus Gate--Source
Voltage at a Constant Input Power
0
P
out
, OUTPUT POWER (WATTS) PEAK
1200
1000
800
600
400
1.5 2 2.5 3
P
in
=8.8W
P
in
=4.4W
0.5 1
V
DD
= 50 Vdc, f = 915 MHz
Pulse Width = 100 msec, 10% Duty Cycle
200
915 802 912
f
(MHz)
P1dB
(W)
P3dB
(W)
Figure 15. Output Power versus Input Power
24
22
20
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 16. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
G
ps
, POWER GAIN (dB)
D,
DRAIN EFFICIENCY (%)
23
21
30 100 1000
0
80
70
60
50
40
30
20
90
D
19
18
10
D
V
DD
=50Vdc,I
DQ(A+B)
= 200 mA, f = 915 MHz
Pulse Width = 100 sec, 10% Duty Cycle
17
15
16
20
100
1000
10
80
70
60
50
40
30
20
90
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 17. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
D,
DRAIN EFFICIENCY (%)
0
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 18. Power Gain versus Output Power
and Drain--Source Voltage
24
G
ps
, POWER GAIN (dB)
21
20
19
18
17
600 800 1000
23
22
V
DD
=30V
200 400
16
17
T
C
= –40_C
21
20
19
18
22
23
24
35 V
G
ps
0
V
DD
=50Vdc,I
DQ(A+B)
= 200 mA, f = 915 MHz
Pulse Width = 100 msec, 10% Duty Cycle
46
44
40 42 44
16
15
25_C
85_C
85_C
25_C
–40_C
15
12
14
13
40 V
45 V
50 V
V
DD
= 50 Vdc, f = 915 MHz
Pulse Width = 100 sec, 10% Duty Cycle
200 mA
400 mA
600 mA
800 mA
1000 mA
200 mA
400 mA
600 mA
800 mA
I
DQ(A+B)
= 1000 mA
I
DQ(A+B)
= 200 mA, f = 915 MHz
Pulse Width = 100 sec, 10% Duty Cycle
G
ps
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

MRF13750HR5

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Buy MRF13750HR5
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors RF Power LDMOS Transistor 750 W
Lifecycle:
New from this manufacturer.
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