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AT45DB041A-RC-2.5

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P28
AT45DB041A
22
Detailed Bit-level Read Timing – SPI Mode 3
Continuous Array Read (Opcode: E8H)
Burst Array Read (Opcode: E8H)
SI
1
1XXX
CS
SO
SCK
12 63 64 65 66 67
HIGH-IMPEDANCE
D
7
D
6
D
5
D
2
D
1
D
0
D
7
D
6
D
5
BIT 0
OF
PAGE n+1
BIT 2111
OF
PAGE n
LSB MSB
tSU
tV
DATA OUT
SI
1
1XXX
CS
SO
SCK
HIGH-IMPEDANCE
D
7
D
6
D
1
D
0
D
7
D
6
D
5
DATA OUT
BIT 2111
OF
PAGE n
LSB MSB
tSU
tV
tBRBD
BIT 0
OF
PAGE n+1
12
63 64 65 66
AT45DB041A
23
Detailed Bit-level Read Timing – SPI Mode 3 (Continued)
Main Memory Page Read (Opcode: D2H)
Buffer Read (Opcode: D4H or D6H)
Status Register Read (Opcode: D7H)
SI
1
1
0
10
XXX
CS
SO
SCK
12345 61 62 63 64 65 66 67
XX
HIGH-IMPEDANCE
D
7
D
6
D
5
DATA OUT
COMMAND OPCODE
MSB
tSU
tV
D
4
68
SI
1
1
0
10
XXX
CS
SO
SCK
12345 37 38 39 40 41 42 43
XX
HIGH-IMPEDANCE
D
7
D
6
D
5
DATA OUT
COMMAND OPCODE
MSB
tSU
tV
D
4
44
SI
1
1
0
10
111
CS
SO
SCK
12345 7891011 12 17 18
HIGH-IMPEDANCE
D
7
D
6
D
5
STATUS REGISTER OUTPUT
COMMAND OPCODE
MSB
tSU
tV
6
D
4
D
0
D
7
LSB MSB
D
6
AT45DB041A
24
Figure 1. Algorithm for Sequentially Programming or Reprogramming the Entire Array
Notes: 1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by-
page.
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer
to Main Memory Page Program operation.
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page
within the entire array.
START
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
END
provide address
and data
BUFFER WRITE
(84H, 87H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
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AT45DB041A-RC-2.5

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Description:
IC FLASH 4M SPI 10MHZ 28SOIC
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