AT45DB041A
7
of main memory. The operation is internally self-timed and
should take place in a maximum time of t
EP
. During this
time, the status register will indicate that the part is busy.
If a sector is programmed or reprogrammed sequentially
page-by-page, then the programming algorithm shown in
Figure 1 on page 24 is recommended. Otherwise, if multi-
ple bytes in a page or several pages are programmed
randomly in a sector, then the programming algorithm
shown in Figure 2 on page 25 is recommended.
Operation Mode Summary
The modes described can be separated into two groups
modes which make use of the Flash memory array (Group
A) and modes which do not make use of the Flash memory
array (Group B).
Group A modes consist of:
1. Main Memory Page Read
2. Main Memory Page to Buffer 1 (or 2) Transfer
3. Main Memory Page to Buffer 1 (or 2) Compare
4. Buffer 1 (or 2) to Main Memory Page Program with
Built-in Erase
5. Buffer 1 (or 2) to Main Memory Page Program
without Built-in Erase
6. Page Erase
7. Block Erase
8. Main Memory Page Program through Buffer
9. Auto Page Rewrite
Group B modes consist of:
1. Buffer 1 (or 2) Read
2. Buffer 1 (or 2) Write
3. Status Register Read
If a Group A mode is in progress (not fully completed) then
another mode in Group A should not be started. However,
during this time in which a Group A mode is in progress,
modes in Group B can be started.
This gives the Serial DataFlash the ability to virtually
accommodate a continuous data stream. While data is
being programmed into main memory from buffer 1, data
can be loaded into buffer 2 (or vice versa). See application
note AN-4 (Using Atmels Serial DataFlash) for more
details.
Pin Descriptions
SERIAL INPUT (SI): The SI pin is an input-only pin and is
used to shift data into the device. The SI pin is used for all
data input including opcodes and address sequences.
SERIAL OUTPUT (SO): The SO pin is an output-only pin
and is used to shift data out from the device.
SERIAL CLOCK (SCK): The SCK pin is an input-only pin
and is used to control the flow of data to and from the
DataFlash. Data is always clocked into the device on the
rising edge of SCK and clocked out of the device on the
falling edge of SCK.
CHIP SELECT (CS
): The DataFlash is selected when the
CS
pin is low. When the device is not selected, data will not
be accepted on the SI pin, and the SO pin will remain in a
high-impedance state. A high-to-low transition on the CS
pin is required to start an operation, and a low-to-high tran-
sition on the CS
pin is required to end an operation.
WRITE PROTECT: If the WP pin is held low, the first 256
pages of the main memory cannot be reprogrammed. The
only way to reprogram the first 256 pages is to first drive
the protect pin high and then use the program commands
previously mentioned. The WP
pin is internally pulled high;
therefore, connection of the WP
pin is not necessary if this
pin and feature will not be utilized. However, it is recom-
mended that the WP
pin be driven high externally
whenever possible.
RESET
: A low state on the reset pin (RESET) will terminate
the operation in progress and reset the internal state
machine to an idle state. The device will remain in the reset
condition as long as a low level is present on the RESET
pin. Normal operation can resume once the RESET pin is
brought back to a high level.
The device incorporates an internal power-on reset circuit,
so there are no restrictions on the RESET
pin during
power-on sequences. The RESET
pin is also internally
pulled high; therefore, connection of the RESET
pin is not
necessary if this pin and feature will not be utilized. How-
ever, it is recommended that the RESET
pin be driven high
externally whenever possible.
READY/BUSY
: This open drain output pin will be driven
low when the device is busy in an internally self-timed oper-
ation. This pin, which is normally in a high state (through
a1k
external pull-up resistor), will be pulled low during
programming operations, compare operations, and during
page-to-buffer transfers.
The busy status indicates that the Flash memory array and
one of the buffers cannot be accessed; read and write
operations to the other buffer can still be performed.
Power-on/Reset State
When power is first applied to the device, or when recover-
ing from a reset condition, the device will default to SPI
Mode 3. In addition, the SO pin will be in a high-impedance
state, and a high-to-low transition on the CS
pin will be
required to start a valid instruction. The SPI mode will be
automatically selected on every falling edge of CS
by
sampling the inactive clock state.
AT45DB041A
8
Note: In Tables 2 and 3, an SCK mode designation of Any denotes any one of the four modes of operation (Inactive Clock Polarity
Low, Inactive Clock Polarity High, SPI Mode 0, or SPI Mode 3).
Table 1. Read Commands
Command SCK Mode Opcode
Continuous Array Read
Inactive Clock Polarity Low or High 68H
SPI Mode 0 or 3 E8H
Burst Array Read
Inactive Clock Polarity Low or High 68H
SPI Mode 0 or 3 E8H
Main Memory Page Read
Inactive Clock Polarity Low or High 52H
SPI Mode 0 or 3 D2H
Buffer 1 Read
Inactive Clock Polarity Low or High 54H
SPI Mode 0 or 3 D4H
Buffer 2 Read
Inactive Clock Polarity Low or High 56H
SPI Mode 0 or 3 D6H
Status Register Read
Inactive Clock Polarity Low or High 57H
SPI Mode 0 or 3 D7H
Table 2. Program and Erase Commands
Command SCK Mode Opcode
Buffer 1 Write Any 84H
Buffer 2 Write Any 87H
Buffer 1 to Main Memory Page Program with Built-in Erase Any 83H
Buffer 2 to Main Memory Page Program with Built-in Erase Any 86H
Buffer 1 to Main Memory Page Program without Built-in Erase Any 88H
Buffer 2 to Main Memory Page Program without Built-in Erase Any 89H
Page Erase Any 81H
Block Erase Any 50H
Main Memory Page Program through Buffer 1 Any 82H
Main Memory Page Program through Buffer 2 Any 85H
Table 3. Additional Commands
Command SCK Mode Opcode
Main Memory Page to Buffer 1 Transfer Any 53H
Main Memory Page to Buffer 2 Transfer Any 55H
Main Memory Page to Buffer 1 Compare Any 60H
Main Memory Page to Buffer 2 Compare Any 61H
Auto Page Rewrite through Buffer 1 Any 58H
Auto Page Rewrite through Buffer 2 Any 59H
AT45DB041A
9
Note: r = Reserved Bit
P = Page Address Bit
B = Byte/Buffer Address Bit
x = Dont Care
Table 4. Detailed Bit-level Addressing Sequence
Opcode Opcode
Address Byte Address Byte Address Byte
Additional
Dont Care
Bytes
Required
50H 01010000rrrrPPPPPPPPxxxxxxxxxxxx N/A
52H 01010010rrrrPPPPPPPPPPPBBBBBBBBB 4 Bytes
53H 01010011rrrrPPPPPPPPPPPxxxxxxxxx N/A
54H 01010100xxxxxxxxxxxxxxxBBBBBBBBB 1 Byte
55H 01010101rrrrPPPPPPPPPPPxxxxxxxxx N/A
56H 01010110xxxxxxxxxxxxxxxBBBBBBBBB 1 Byte
57H 01010111 N/A N/A N/A N/A
58H 01011000rrrrPPPPPPPPPPPxxxxxxxxx N/A
59H 01011001rrrrPPPPPPPPPPPxxxxxxxxx N/A
60H 01100000rrrrPPPPPPPPPPPxxxxxxxxx N/A
61H 01100001rrrrPPPPPPPPPPPxxxxxxxxx N/A
68H 01101000rrrrPPPPPPPPPPPBBBBBBBBB 4 Bytes
81H 10000001rrrrPPPPPPPPPPPxxxxxxxxx N/A
82H 10000010rrrrPPPPPPPPPPPBBBBBBBBB N/A
83H 10000011rrrrPPPPPPPPPPPxxxxxxxxx N/A
84H 10000100xxxxxxxxxxxxxxxBBBBBBBBB N/A
85H 10000101rrrrPPPPPPPPPPPBBBBBBBBB N/A
86H 10000110rrrrPPPPPPPPPPPxxxxxxxxx N/A
87H 10000111xxxxxxxxxxxxxxxBBBBBBBBB N/A
88H 10001000rrrrPPPPPPPPPPPxxxxxxxxx N/A
89H 10001001rrrrPPPPPPPPPPPxxxxxxxxx N/A
D2H 11010010rrrrPPPPPPPPPPPBBBBBBBBB 4 Bytes
D4H 11010100xxxxxxxxxxxxxxxBBBBBBBBB 1 Byte
D6H 11010110xxxxxxxxxxxxxxxBBBBBBBBB 1 Byte
D7H 11010111 N/A N/A N/A N/A
E8H 11101000rrrrPPPPPPPPPPPBBBBBBBBB 4 Bytes
R
eserve
d
Reserved
Reserved
R
eserve
d
PA
10
PA
9
PA
8
PA
7
PA
6
PA
5
PA
4
PA
3
PA2
PA1
PA
0
BA
8
BA
7
BA
6
BA
5
BA
4
BA
3
BA
2
BA
1
BA0

AT45DB041A-RC-2.5

Mfr. #:
Manufacturer:
Description:
IC FLASH 4M SPI 10MHZ 28SOIC
Lifecycle:
New from this manufacturer.
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