November 2009 Doc ID 13206 Rev 3 1/14
14
STD100N3LF3
N-channel 30 V, 0.0045 , 80 A, DPAK
planar STripFET™ II Power MOSFET
Features
100% avalanche tested
Logic level threshold
Applications
Switching application
Automotive
Description
This STripFET™ II Power MOSFET technology is
among the latest improvements, which have been
especially tailored to minimize on-state resistance
providing superior switching performance.
Figure 1. Internal schematic diagram
Type V
DSSS
R
DS(on)
I
D
Pw
STD100N3LF3 30 V <0.0055 80 A
(1)
1. Current limited by package
110 W
1
3
DPAK
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Table 1. Device summary
Order codes Marking Package Packaging
STD100N3LF3 100N3LF3 DPAK Tape and reel
www.st.com
Contents STD100N3LF3
2/14 Doc ID 13206 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STD100N3LF3 Electrical ratings
Doc ID 13206 Rev 3 3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
GS
Gate-source voltage ± 20 V
I
D
(1)
1. Current limited by package.
Drain current (continuous) at T
C
= 25 °C 80 A
I
D
Drain current (continuous) at T
C
=100 °C 70 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
P
TOT
Total dissipation at T
C
= 25 °C 110 W
Derating factor 0.73 W/°C
dv/dt
(3)
3. I
SD
80A, di/dt 360 A/µs, V
DS
V
(BR)DSS
, T
J
T
JMAX
Peak diode recovery voltage slope 3.9 V/ns
T
stg
Storage temperature
-55 to 175 °C
T
J
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case max 1.36 °C/W
R
thJA
Thermal resistance junction-ambient max 100 °C/W
T
l
Maximum lead temperature for soldering
purpose
275 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Not-repetitive avalanche current
(pulse width limited by T
J
max)
40 A
E
AS
Single pulsed avalanche energy
(starting T
J
= 25 °C, I
D
= I
AV,
V
DD
= 24 V)
500 mJ

STD100N3LF3

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 30V 0.0045 Ohm 80A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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