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STD100N3LF3

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STD100N3LF3 Electrical characteristics
Doc ID 13206 Rev 3 7/14
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized BV
DSS
vs temperature
Figure 12. Normalized on resistance vs
temperature
Figure 13. Source-drain diode forward
characteristics
Electrical characteristics STD100N3LF3
8/14 Doc ID 13206 Rev 3
The previous curve gives the single pulse safe operating area for unclamped inductive
loads, under the following conditions:
P
D(AVE)
= 0.5 * (1.3 * BV
DSS
*I
AV
)
E
AS(AR)
= P
D(AVE)
* t
AV
Where:
I
AV
is the allowable current in avalanche
P
D(AVE)
is the average power dissipation in avalanche (single pulse)
t
AV
is the time in avalanche
Figure 14. Allowable Iav vs time in avalanche
STD100N3LF3 Test circuits
Doc ID 13206 Rev 3 9/14
3 Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
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STD100N3LF3

Mfr. #:
Buy STD100N3LF3
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 30V 0.0045 Ohm 80A
Lifecycle:
New from this manufacturer.
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