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STD100N3LF3
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
Electrical ch
aracteristics
STD100N3LF3
4/14
Doc ID 13206 Rev 3
2 Electrical
characteristics
(T
CASE
=25°C unless otherwise specified)
T
able 5.
On/off state
s
Symbol
Parameter
T
est cond
itions Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250
µ
A, V
GS
= 0
30
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125 °C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V
±200
nA
V
GS(th)
Gate threshold v
oltage
V
DS
= V
GS
, I
D
= 250 µA
1
2.5
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V
, I
D
= 40 A
V
GS
= 5 V
, I
D
= 20 A
0.0045
0.008
0.0055
0.01
Ω
Ω
V
GS
= 10 V
,
I
D
= 40 A @125 °C
V
GS
= 5 V
,
I
D
= 20 A @125 °C
0.0068
0.0146
Ω
Ω
T
able 6.
Dynamic
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
g
fs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
F
orward transconductance
V
DS
= 10 V
,
I
D
= 15 A
-
31
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Re
vers
e transf
er
capacitance
V
DS
= 25 V
, f = 1 MHz,
V
GS
= 0
-
2060
728
67
pF
pF
pF
Q
g
Q
gs
Q
gd
T
otal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 24 V
, I
D
= 80 A
V
GS
= 5 V
Figure 16 on pag
e 9
-
20
7
7.5
27
nC
nC
nC
R
G
Gate input resistance
f = 1 MHz gate DC Bias = 0
test signal le
vel = 20 mV
open drain
-1
.
9
Ω
STD100N3LF3
Electrical ch
aracteristics
Doc ID 13206 Rev
3
5/14
T
able 7.
Switching ti
mes
Symbol
Pa
rameter
T
est conditions
Min.
T
y
p.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
T
ur
n-on delay time
Rise time
T
ur
n-off delay time
F
all time
V
DD
= 15 V
, I
D
= 40 A,
R
G
=4.7
Ω,
V
GS
=10 V
Figure 15 on page 9
-
9
205
31
35
-
ns
ns
ns
ns
T
able 8.
Source drain diode
Symbol
P
arameter
T
est co
nditions
Min
T
yp.
Max
Un
it
I
SD
Source-drain current
-
80
A
I
SDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
320
A
V
SD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
F
orward on voltage
I
SD
= 40 A, V
GS
= 0
-
1.3
V
t
rr
Q
rr
I
RRM
Re
verse reco
very time
Rev
erse recov
ery ch
arge
Re
verse reco
very current
I
SD
= 80 A,
di/dt = 100 A/µs,
V
DD
= 25 V
, T
J
= 150 °C
Figure 17 on page 9
-
40
40
2
ns
µC
A
Electrical ch
aracteristics
STD100N3LF3
6/14
Doc ID 13206 Rev 3
2.1 Electrical
characteri
stics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output c
haracteristics
Figure 5.
T
ransf
er characteri
stics
Figure 6.
T
ransconductanc
e
Figure 7.
Static drain-sour
ce on r
esistance
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
STD100N3LF3
Mfr. #:
Buy STD100N3LF3
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 30V 0.0045 Ohm 80A
Lifecycle:
New from this manufacturer.
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