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74AHC00PW,112

P1-P3P4-P6P7-P9P10-P12P13-P15
74AHC_AHCT00_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 28 April 2008 3 of 14
NXP Semiconductors
74AHC00; 74AHCT00
Quad 2-input NAND gate
5.2 Pin description
6. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care.
Table 2. Pin description
Symbol Pin Description
1A 1 data input
1B 2 data input
1Y 3 data output
2A 4 data input
2B 5 data input
2Y 6 data output
GND 7 ground (0 V)
3Y 8 data output
3A 9 data input
3B 10 data input
4Y 11 data output
4A 12 data input
4B 13 data input
V
CC
14 supply voltage
Table 3. Function selection
[1]
Input Output
nA nB nY
LXH
XLH
HHL
74AHC_AHCT00_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 28 April 2008 4 of 14
NXP Semiconductors
74AHC00; 74AHCT00
Quad 2-input NAND gate
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SO14 packages: above 70 °C the value of P
tot
derates linearly at 8 mW/K.
For TSSOP14 packages: above 60 °C the value of P
tot
derates linearly at 5.5 mW/K.
For DHVQFN14 packages: above 60 °C the value of P
tot
derates linearly at 4.5 mW/K.
8. Recommended operating conditions
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +7.0 V
V
I
input voltage −0.5 +7.0 V
I
IK
input clamping current V
I
< −0.5 V
[1]
−20 - mA
I
OK
output clamping current V
O
< −0.5 V or V
O
> V
CC
+ 0.5 V
[1]
−20 +20 mA
I
O
output current V
O
= −0.5 V to (V
CC
+ 0.5 V) −25 +25 mA
I
CC
supply current - +75 mA
I
GND
ground current −75 - mA
T
stg
storage temperature −65 +150 °C
P
tot
total power dissipation T
amb
= −40 °C to +125 °C
[2]
- 500 mW
Table 5. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
74AHC00
V
CC
supply voltage 2.0 5.0 5.5 V
V
I
input voltage 0 - 5.5 V
V
O
output voltage 0 - V
CC
V
T
amb
ambient temperature −40 +25 +125 °C
∆t/∆V input transition rise and fall rate V
CC
= 3.0 V to 3.6 V - - 100 ns/V
V
CC
= 4.5 V to 5.5 V - - 20 ns/V
74AHCT00
V
CC
supply voltage 4.5 5.0 5.5 V
V
I
input voltage 0 - 5.5 V
V
O
output voltage 0 - V
CC
V
T
amb
ambient temperature −40 +25 +125 °C
∆t/∆V input transition rise and fall rate V
CC
= 4.5 V to 5.5 V - - 20 ns/V
74AHC_AHCT00_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 28 April 2008 5 of 14
NXP Semiconductors
74AHC00; 74AHCT00
Quad 2-input NAND gate
9. Static characteristics
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
74AHC00
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V 1.5 - - 1.5 - 1.5 - V
V
CC
= 3.0 V 2.1 - - 2.1 - 2.1 - V
V
CC
= 5.5 V 3.85 - - 3.85 - 3.85 - V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V - - 0.5 - 0.5 - 0.5 V
V
CC
= 3.0 V - - 0.9 - 0.9 - 0.9 V
V
CC
= 5.5 V - - 1.65 - 1.65 - 1.65 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
= −50 µA; V
CC
= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
I
O
= −50 µA; V
CC
= 3.0 V 2.9 3.0 - 2.9 - 2.9 - V
I
O
= −50 µA; V
CC
= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= −4.0 mA; V
CC
= 3.0 V 2.58 - - 2.48 - 2.40 - V
I
O
= −8.0 mA; V
CC
= 4.5 V 3.94 - - 3.80 - 3.70 - V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 50 µA; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 50 µA; V
CC
= 3.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 50 µA; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 3.0 V - - 0.36 - 0.44 - 0.55 V
I
O
= 8.0 mA; V
CC
= 4.5 V - - 0.36 - 0.44 - 0.55 V
I
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
- - 0.1 - 1.0 - 2.0 µA
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
= 5.5 V
- - 2.0 - 20 - 40 µA
C
I
input capacitance V
I
=V
CC
or GND - 3.0 10 - 10 - 10 pF
74AHCT00
V
IH
HIGH-level input
voltage
V
CC
= 4.5 V to 5.5 V 2.0 - - 2.0 - 2.0 - V
V
IL
LOW-level input
voltage
V
CC
= 4.5 V to 5.5 V - - 0.8 - 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= −50 µA 4.4 4.5 - 4.4 - 4.4 - V
I
O
= −8.0 mA 3.94 - - 3.80 - 3.70 - V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 50 µA - 0 0.1 - 0.1 - 0.1 V
I
O
= 8.0 mA - - 0.36 - 0.44 - 0.55 V
I
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
- - 0.1 - 1.0 - 2.0 µA
P1-P3P4-P6P7-P9P10-P12P13-P15

74AHC00PW,112

Mfr. #:
Buy 74AHC00PW,112
Manufacturer:
Nexperia
Description:
Logic Gates QUAD 2-INPUT NAND
Lifecycle:
New from this manufacturer.
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