74AHC_AHCT00_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 28 April 2008 6 of 14
NXP Semiconductors
74AHC00; 74AHCT00
Quad 2-input NAND gate
10. Dynamic characteristics
[1] Typical values are measured at nominal supply voltage (V
CC
= 3.3 V and V
CC
= 5.0 V).
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in µW).
P
D
=C
PD
× V
CC
2
× f
i
× N+Σ(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
Σ(C
L
× V
CC
2
× f
o
) = sum of the outputs.
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
= 5.5 V
- - 2.0 - 20 - 40 µA
∆I
CC
additional supply
current
per input pin;
V
I
=V
CC
− 2.1 V;
other pins at V
CC
or GND;
I
O
= 0 A; V
CC
= 4.5 V to 5.5 V
- - 1.35 - 1.5 - 1.5 mA
C
I
input capacitance V
I
=V
CC
or GND - 3.0 10 - 10 - 10 pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ
[1]
Max Min Max Min Max
74AHC00
t
pd
propagation
delay
nA, nB to nY; see Figure 6
[2]
V
CC
= 3.0 V to 3.6 V
C
L
= 15 pF - 4.5 7.9 1.0 9.5 1.0 10.0 ns
C
L
= 50 pF - 6.0 11.4 1.0 13.0 1.0 14.5 ns
V
CC
= 4.5 V to 5.5 V
C
L
= 15 pF - 3.2 5.5 1.0 6.5 1.0 7.0 ns
C
L
= 50 pF - 4.5 7.5 1.0 8.5 1.0 9.5 ns
C
PD
power
dissipation
capacitance
C
L
= 50 pF; f
i
= 1 MHz;
V
I
= GND to V
CC
[3]
- 7.0 - - - - - pF
74AHCT00
t
pd
propagation
delay
nA, nB to nY; see Figure 6
[2]
V
CC
= 4.5 V to 5.5 V
C
L
= 15 pF - 3.3 6.9 1.0 8.0 1.0 9.0 ns
C
L
= 50 pF - 4.5 7.9 1.0 9.0 1.0 10.0 ns
C
PD
power
dissipation
capacitance
C
L
= 50 pF; f
i
= 1 MHz;
V
I
= GND to V
CC
[3]
- 7.0 - - - - - pF
