Device description and operation L6741
10/16
This last term is the important one to be determined to calculate the device power
dissipation.
The total power dissipated to switch the mosfets results:
When designing an application based on L6741 it is recommended to take into
consideration the effect of external gate resistors on the power dissipated by the driver.
External gate resistors helps the device to dissipate the switching power since the same
power P
SW
will be shared between the internal driver impedance and the external resistor
resulting in a general cooling of the device.
Referring to Figure 6, classical mosfet driver can be represented by a push-pull output stage
with two different mosfets: P-MOSFET to drive the external gate high and N-MOSFET to
drive the external gate low (with their own R
dsON
: R
hi_HS,
R
lo_HS
, R
hi_LS,
R
lo_LS
). The
external power mosfet can be represented in this case as a capacitance (C
G_HS
, C
G_LS
)
that stores the gate-charge (Q
G_HS
, Q
G_LS
) required by the external power MOSFET to
reach the driving voltage (PVCC for HS and VCC for LS). This capacitance is charged and
discharged at the driver switching frequency F
SW
.
The total power Psw is dissipated among the resistive components distributed along the
driving path. According to the external Gate resistance and the power-MOSFET intrinsic
gate resistance, the driver dissipates only a portion of Psw as follow:
The total power dissipated from the driver can then be determined as follow:
Figure 6. Equivalent circuit for MOSFET drive.
P
SW
F
SW
Q
GHS
PVCC Q
GLS
VCC+()=
P
SW HS
1
2
---
C
GHS
PVCC
2
Fsw
R
hiHS
R
hiHS
R
GateHS
R
iHS
++
--------------------------------------------------------------- -
R
loHS
R
loHS
R
GateHS
R
iHS
++
----------------------------------------------------------------+
⎝⎠
⎛⎞
⋅⋅ =
P
SW LS
1
2
---
C
GLS
VCC
2
Fsw
R
hiLS
R
hiLS
R
GateLS
R
iLS
++
------------------------------------------------------------- -
R
loLS
R
loLS
R
GateLS
R
iLS
++
--------------------------------------------------------------+
⎝⎠
⎛⎞
⋅⋅ =
PP
DC
P
SW HS
P
SW LS
++=
R
GATELS
R
ILS
C
GLS
VCC
LS DRIVER LS MOSFET
GND
LGATE
R
GATEHS
R
IHS
C
GHS
BOOT
HS DRIVER HS MOSFET
PHASE
HGATE
PVCC
R
hiLS
R
loLS
R
hiHS
R
loHS
Obsolete Product(s) - Obsolete Product(s)
L6741 Device description and operation
11/16
5.6 Layout guidelines
L6741 provides driving capability to implement high-current step-down DC-DC converters.
The first priority when placing components for these applications has to be reserved to the
power section, minimizing the length of each connection and loop as much as possible. To
minimize noise and voltage spikes (also EMI and losses) power connections must be a part
of a power plane and anyway realized by wide and thick copper traces: loop must be anyway
minimized. The critical components, such as the power MOSFETs, must be close one to the
other. However, some space between the power MOSFET is still required to assure good
thermal cooling and airflow.
Traces between the driver and the MOSFETS should be short and wide to minimize the
inductance of the trace so minimizing ringing in the driving signals. Moreover, VIAs count
needs to be minimized to reduce the related parasitic effect.
The use of multi-layer printed circuit board is recommended.
Small signal components and connections to critical nodes of the application as well as
bypass capacitors for the device supply are also important. Locate the bypass capacitor
(VCC, PVCC and BOOT capacitors) close to the device with the shortest possible loop and
use wide copper traces to minimize parasitic inductance.
Systems that do not use Schottky diodes in parallel to the Low-Side MOSFET might show
big negative spikes on the phase pin. This spike can be limited as well as the positive spike
but has an additional consequence: it causes the bootstrap capacitor to be over-charged.
This extra-charge can cause, in the worst case condition of maximum input voltage and
during particular transients, that boot-to-phase voltage overcomes the abs.max.ratings also
causing device failures. It is then suggested in this cases to limit this extra-charge by adding
a small resistor R
BOOT
in series to the boot capacitor. The use of R
BOOT
also contributes in
the limitation of the spike present on the BOOT pin.
For heat dissipation, place copper area under the IC. This copper area may be connected
with internal copper layers through several VIAs to improve the thermal conductivity. The
combination of copper pad, copper plane and VIAs under the driver allows the device to
reach its best thermal performances.
Figure 7. Driver turn-on and turn-off paths
R
GATE
R
INT
C
GD
C
GS
C
DS
VCC
LS DRIVER LS MOSFET
GND
LGATE
R
GATE
R
INT
C
GD
C
GS
C
DS
BOOT
HS DRIVER HS MOSFET
PHASE
HGATE
VCC
R
BOOT
C
BOOT
R
BOOT
C
BOOT
Obsolete Product(s) - Obsolete Product(s)
Device description and operation L6741
12/16
Figure 8. External components placement example.
1
2
3
4
LGATE
VCC
PVCC
PHASE
GND
PWM
BOOT
UGATE
5
6
7
8
L6741
1
2
3
4
LGATE
VCC
PVCC
PHASE
GND
PWM
BOOT
UGATE
5
6
7
8
L6741
SINGLE SUPPLY (VCC = PVCC) DUAL SUPPLY (VCC <> PVCC)
Rboot Cboot Rboot Cboot
Obsolete Product(s) - Obsolete Product(s)

L6741TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers SnglPphase Dual MOSFET Driver
Lifecycle:
New from this manufacturer.
Delivery:
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