L6741 Device description and operation
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5 Device description and operation
L6741 provides high-current driving control for both High-Side and Low-Side N-Channel
MOSFETS connected as Step-Down DC-DC Converter driven by an external PWM signal.
The integrated high-current drivers allow using different types of power MOSFETs (also
multiple MOS to reduce the equivalent RdsON), maintaining fast switching transition.
The driver for the High-Side MOSFET use BOOT pin for supply and PHASE pin for return.
The driver for the Low-Side MOSFET use the VCC pin for supply and PGND pin for return.
L6741 embodies a anti-shoot-through and adaptive dead-time control to minimize Low-Side
body diode conduction time maintaining good efficiency saving the use of external Schottky
diodes: when the high-side mosfet turns off, the voltage on its source begins to fall; when
the voltage reaches about 2V, the Low-Side MOSFET gate drive voltage is suddenly
applied. When the Low-Side MOSFET turns off, the voltage at LGATE pin is sensed. When
it drops below about 1V, the High-Side MOSFET gate drive voltage is suddenly applied. If
the current flowing in the inductor is negative, the source of highside mosfet will never drop.
To allow the Low-Side MOSFET to turn-on even in this case, a watchdog controller is
enabled: if the source of the High-Side MOSFET doesn't drop, the Low-Side MOSFET is
switched on so allowing the negative current of the inductor to recirculate. This mechanism
allows the system to regulate even if the current is negative.
Before VCC overcome the UVLO threshold, L6741 keeps firmly-OFF both High-Side and
Low-Side MOSFETS then, after the UVLO has crossed, the PWM input keeps the control of
the driver operations. If the PWM input is left floating, the internal resistor divider sets the
HiZ: both MOSFETS are kept in the OFF state until PWM transition.
After UVLO crossing and while in HiZ, the Preliminary-OV protection is activated: if the
voltage senses through the PHASE pin overcome about 2V, the Low-Side MOSFET is
latched ON in order to protect the load from dangerous over-voltage. The Driver status is
reset from a PWM transition.
Driver power supply as well as power conversion input are flexible: every combination of 5V
and 12V can be chosen for High-Side and Low-Side MOSFET voltage drive. Furthermore,
5V, 12V bus or any intermediate bus that allows the conversion can be chosen freely.
Figure 4. Timing diagram
t
prop_L
t
prop_H
t
dead_LH
t
dead_HL
t
prop_H
t
prop_ L
t
hold-off
HiZ Window
PWM
HS Gate
LS Gate
HiZ Window
HiZ
t
hold-off
HiZ
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Device description and operation L6741
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5.1 High-impedance (HiZ) management
The Driver is able to manage High-Impedance state by keeping all MOSFETs in off state. If
the PWM signal remains in the HiZ window for a time longer than the hold-off time, the
device detects the HiZ condition so turning off all the MOSFETs. The HiZ window is defined
as the PWM voltage range comprised between V
PWM_IL
and V
PWM_IH
.
The device may exit from the HiZ state only after a PWM transition to logic zero (V
PWM
<
V
PWM_IL
).
See Figure 4 for details about HiZ timings.
The implementation of the High-Impedance state allows the controller that will be connected
to the driver to manage High-Impedance state of its output, avoiding to produce negative
undershoot on the regulated voltage during the shut-down stage. Furthermore, different
power management states may be managed such as pre-bias start-up.
5.2 Preliminary OV protection
After VCC has overcome its UVLO threshold and while the PWM signal is in the HiZ window,
L6741 activate the Preliminary-OV protection.
The intent of this protection is to protect the load especially from High-Side MOSFET fail-
ures during the system start-up. In fact, VRM, and most in general PWM controllers, have a
12V bus compatible turn-on threshold and results to be non-operative if VCC is below that
turn-on thresholds (that results being in the range of about 10V). In case of an High-Side
mosfet failure, the controller won’t recognize the over voltage until VCC = ~10V (unless
other special features are implemented): but in that case the output voltage is already at the
same voltage (~10V) and the load (CPU in most cases) already burnt.
L6741 by-pass the PWM controller by latching on the Low-Side MOSFET in case the
PHASE pin voltage overcome
2V during the HiZ state. When the PWM input exits form the
HiZ window, the protection is reset and the control of the output voltage is transferred to the
controller connected to the PWM input.
Since the Driver has its own UVLO threshold, a simple way to provide protection to the out-
put in all conditions when the device is OFF consists in supplying the controller through the
5V
SB
bus: 5V
SB
is always present before any other voltage and, in case of High-Side short,
the Low-Side mosfet is driven with 5V assuring a reliable protection of the load.
Preliminary OV is active after UVLO and while the Driver is in HiZ state and it is disabled
after the first PWM transition. The controller will have to manage its output voltage from that
time on.
5.3 Internal BOOT diode
L6741 embeds a boot diode to supply the High-Side driver saving the use of an external
component. Simply connecting an external capacitor between BOOT and PHASE complete
the High-Side supply connections.
To prevent bootstrap capacitor to extra-charge as a consequence of large negative spikes,
an external series resistance R
BOOT
(in the range of few ohms) may be required in series to
BOOT pin.
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L6741 Device description and operation
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Bootstrap capacitor needs to be designed in order to show a negligible discharge due to the
High-Side MOSFET turn-on. In fact it must give a stable voltage supply to the High-Side
driver during the MOSFET turn-on also minimizing the power dissipated by the embedded
Boot Diode. Figure 5 gives some guidelines on how to select the capacitance value for the
bootstrap according to the desired discharge and depending on the selected mosfet.
Figure 5. Bootstrap capacitance design
5.4 Gate driver voltage flexibility
L6741 allows the user to freely-select the gate drive voltage in order to optimize the effi-
ciency of the application.
The Low-Side MOSFET driving voltage depends on the voltage applied to VCC and can
range between 5V to 12V buses.
The High-Side MOSFET driving voltage depends on the voltage applied to PVCC (directly
impacting the bootstrap capacitor voltage) and can range between 5V to 12V buses.
5.5 Power dissipation
L6741 embeds high current drivers for both High-Side and Low-Side MOSFETs: it is then
important to consider the power that the device is going to dissipate in driving them in order
to avoid overcoming the maximum junction operative temperature.
Two main terms contribute in the device power dissipation: bias power and drivers' power.
Device Power (P
DC
) depends on the static consumption of the device through the
supply pins and it is simply quantifiable as follow:
Drivers' power is the power needed by the driver to continuously switch ON and OFF
the external MOSFETs; it is a function of the switching frequency and total gate charge
of the selected MOSFETs. It can be quantified considering that the total power P
SW
dissipated to switch the MOSFETs dissipated by three main factors: external gate
resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance.
0.0
0.5
1.0
1.5
2.0
2.5
0 102030405060708090100
High-Side MOSFET Gate Charge [nC]
BOOT Cap discharge [V]
Cboot = 47nF
Cboot = 100nF
Cboot = 220nF
Cboot = 330nF
Cboot = 470nF
0
500
1000
1500
2000
2500
0.0 0.2 0.4 0.6 0.8 1.0
Boot Cap Delta Voltage [V]
Bootstrap Cap [uF]
Qg = 10nC
Qg = 25nC
Qg = 50nC
Qg = 100nC
P
DC
V
CC
I
CC
V
PVCC
I
PVCC
+=
Obsolete Product(s) - Obsolete Product(s)

L6741TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers SnglPphase Dual MOSFET Driver
Lifecycle:
New from this manufacturer.
Delivery:
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