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Table 12. TRANSMISSION PARAMETERS
Symbol Parameter Conditions Min Typ Max Unit
uBDTx
active
Differential voltage |uBPuBM| when sending
symbol “Data_0” or “Data_1”
R
BUS
= 4055 W;
C
BUS
= 100 pF
Parameters defined in
Figure 10.
600 2000 mV
uBDTx
Idle
Differential voltage |uBPuBM| when driving
signal “Idle”
0 30 mV
dBDTx10 Transmitter delay, negative edge
Test setup as per
Figure 17 with
R
BUS
= 40 W;
C
BUS
= 100 pF
Sum of TXD signal rise
and fall time
(20%80% V
IO
)
of up to 9 ns
Parameters defined in
Figure 10.
75 ns
dBDTx01 Transmitter delay, positive edge 75 ns
dBDTxAsym Transmitter delay mismatch,
|dBDTx10dBDTx01| (Note 8)
4 ns
dBusTx10 Fall time of the differential bus voltage from
80% to 20%
6 18.75 ns
dBusTx01 Rise time of the differential bus voltage from
20% to 80%
6 18.75 ns
dBusTxDif Differential bus voltage fall and rise time mis-
match |dBusTx10dBusTx01|
3 ns
dBDTxia Transmitter delay idle > active
Test setup as per
Figure 17 with
R
BUS
= 40 W;
C
BUS
= 100 pF
Parameters defined in
Figure 11.
75 ns
dBDTxai Transmitter delay active > idle 75 ns
dBDTxDM Idleactive transmitter delay mismatch
| dBDTxia dBDTxai |
50 ns
dBusTxia Transition time idle > active 30 ns
dBusTxai Transition time active > idle 30 ns
dTxEN
LOW
Time span of bus activity 550 650 ns
dBDTxActiveMax Maximum length of transmitter activation 650 2600
ms
iBP
BMShortMax
iBM
BPShortMax
Absolute maximum output current when BP
shorted to BM – no time limit
R
ShortCircuit
1 W
60 mA
iBP
GNDShortMax
iBM
GNDShortMax
Absolute maximum output current when shor-
ted to GND – no time limit
R
ShortCircuit
1 W
60 mA
iBP
5VShortMax
iBM
5VShortMax
Absolute maximum output current when shor-
ted to V
BAT
= 5 V – no time limit
R
ShortCircuit
1 W
60 mA
iBP
BAT27ShortMax
iBM
BAT27ShortMax
Absolute maximum output current when shor-
ted to V
BAT
= 27 V – no time limit
R
ShortCircuit
1 W
60 mA
iBP
BAT48ShortMax
iBM
BAT48ShortMax
Absolute maximum output current when shor-
ted to V
BAT
= 48 V – no time limit
R
ShortCircuit
1 W
72 mA
R
BDTransmitter
Bus interface equivalent output impedance
(Bus driver simulation model parameter)
31 105 500
W
8. Guaranteed for ±300 mV and ±150 mV level of uBus
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dBDTx10
dBDTx01
dBusTx 10
dBusTx01
100%
80%
20%
0%
uTxD
300 mV
300 mV
uBus
100...4400 ns
Figure 10. Transmission Parameters (TxEN is Low and BGE is High)
uBDTx
Active
uBDTx
Active
100% V
IO
50% V
IO
0% V
IO
NOTE: TXD signal is constant for 100..4400 ns before the first edge.
All parameters values are valid even if the test is performed with opposite polarity.
dBDTxia
dBDTxai
dBusTxia
dBusTxai
uTxEN
uBDTx
uBus
Figure 11. Transmission Parameters for Transitions between Idle and Active (TXD is Low)
dTxEN
LOW
300 mV
30 mV
0% V
IO
50% V
IO
100% V
IO
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Table 13. RECEPTION PARAMETERS
Symbol Parameter Conditions Min Typ Max Unit
uData0 Receiver threshold for detecting Data_0
Activity detected
previously.
|uBPuBM| 3 V
300 150 mV
uData1 Receiver threshold for detecting Data_1 150 300 mV
|uData1||uData0| Mismatch of receiver thresholds (uBP+uBM)/2 = 2.5 V 30 30 mV
uData0_LP Low power receiver threshold for detecting
Data_0
uV
BAT
7 V 400 100 mV
uCM Common mode voltage range (with respect to
GND) that does not disturb the receiver func-
tion and reception level parameters
uBP = (uBP+uBM)/2
(Note 9)
10 15 V
uBias
Bus bias voltage during bus state Idle in
normalpower modes
R
BUS
= 4055 W;
C
BUS
= 100 pF
(Note 10)
1800 2500 3200 mV
Bus bias voltage during bus state Idle in
lowpower modes
200 0 200 mV
R
CM1
, R
CM2
Receiver common mode resistance (Note 10) 10 40
kW
C_BP, C_BM Input capacitance on BP and BM pin (Note 11) f = 5 MHz 20 pF
C_Bus
DIF
Bus differential input capacitance (Note 11) f = 5 MHz 5 pF
iBP
LEAK
iBM
LEAK
Absolute leakage current when driver is off uBP = uBM = 5 V
All other pins = 0 V
25
mA
iBP
LEAKGND
iBM
LEAKGND
Absolute leakage current,
in case of loss of GND
uBP = uBM = 0 V
All other pins = 16 V
1600
mA
uBusRx
Data
Test signal parameters for reception
of Data_0 and Data_1 symbols
Test signal and
parameters defined in
Figure 12 and
Figure 13.
RxD pin loaded with
25 pF capacitor.
400 3000 mV
dBusRx0
BD
60 4330 ns
dBusRx1
BD
60 4330 ns
dBusRx10 22.5 ns
dBusRx01 22.5 ns
dBDRx10 Receiver delay, negative edge (Note 12) 75 ns
dBDRx01 Receiver delay, positive edge (Note 12) 75 ns
dBDRxAsym Receiver delay mismatch
| dBDRx10 dBDRx01| (Note 12)
5 ns
uBusRx
Test signal parameters for
bus activity detection
400 3000 mV
dBusActive 590 610 ns
dBusIdle 590 610 ns
dBusRxia 18 22 ns
dBusRxai 18 22 ns
dBDIdleDetection Bus driver filtertime for idle detection 50 200 ns
dBDActivityDetection Bus driver filtertime for activity detection 100 250 ns
dBDRxai Bus driver idle reaction time 50 275 ns
dBDRxia Bus driver activity reaction time 100 325 ns
dBDTxRxai IdleLoopdelay 325 ns
9. Tested on a receiving bus driver. Sending bus driver has a ground offset voltage in the range of [12.5 V to +12.5 V] and sends a 50/50 pattern.
10.Bus driver is connected to GND and uV
CC
= 5 V and uV
BAT
7 V.
11. Values based on design and characterization, not tested in production.
12.Guaranteed for ±300 mV and ±150 mV level of uBus.

NCV7381DP0R2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Interface - Specialized CLAMP 30 FLEXRAY TRANSC.
Lifecycle:
New from this manufacturer.
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