SiC530
www.vishay.com
Vishay Siliconix
S15-2523-Rev. B, 02-Nov-15
1
Document Number: 62940
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
30 A VRPower
®
Integrated Power Stage
DESCRIPTION
The SiC530 is an integrated power stage solution optimized
for synchronous buck applications to offer high current, high
efficiency, and high power density performance. Packaged
in Vishay’s proprietary 4.5 mm x 3.5 mm MLP package,
SiC530 enables voltage regulator designs to deliver up to
30 A continuous current per phase.
The internal power MOSFETs utilize Vishay’s
state-of-the-art Gen IV TrenchFET technology that delivers
industry benchmark performance to significantly reduce
switching and conduction losses.
The SiC530 incorporates an advanced MOSFET gate driver
IC that features high current driving capability, adaptive
dead-time control, an integrated bootstrap Schottky diode,
and zero current detect to improve light load efficiency. The
driver is also compatible with a wide range of PWM
controllers, supports tri-state PWM, and 5 V PWM logic.
A user selectable diode emulation mode (ZCD_EN#)
function is included to improve the light load performance.
The device also supports the PS4 mode to reduce power
consumption when system operates in standby state.
FEATURES
Thermally enhanced PowerPAK
®
MLP4535-22L
package
Vishay’s Gen IV MOSFET technology and a
low-side MOSFET with integrated Schottky
diode
Delivers up to 30 A continuous current, 40 A at 10 ms peak
current
High efficiency performance
High frequency operation up to 2 MHz
Power ON reset
5 V PWM logic with tri-state and hold-off
Supports PS4 mode light load requirement for IMVP8 with
low shutdown supply current (5 V, 5 μA)
Under voltage lockout for V
CIN
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Multi-phase VRDs for CPU, GPU, and memory
INTEL IMVP-8 IA / GT core power
Up to 18 V rail input DC/DC VR modules
TYPICAL APPLICATION DIAGRAM
Fig. 1 - SiC530 Typical Application Diagram
PWM
controller
Gate
driver
5V
V
IN
V
OUT
V
CIN
PWM
V
DRV
V
IN
BOOT
V
SWH
P
GND
GL
C
GND
PHASE
ZCD_EN#
SiC530
www.vishay.com
Vishay Siliconix
S15-2523-Rev. B, 02-Nov-15
2
Document Number: 62940
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PINOUT CONFIGURATION
Fig. 2 - SiC530 Pin Configuration
PIN DESCRIPTION
PIN NUMBER NAME FUNCTION
1 ZCD_EN# ZCD, PS4 control. Active low
2V
CIN
Supply voltage for internal logic circuitry
23 C
GND
Analog ground for the driver IC
3 N.C. No connection
4 BOOT High-side driver bootstrap voltage
5 PHASE Return path of high-side gate driver
6 to 8, 25 V
IN
Power stage input voltage. Drain of high-side MOSFET
9 to 11, 17, 18, 20, 26 P
GND
Power ground
12 to 16 V
SWH
Switch node of the power stage
19, 24 GL Low-side gate signal
21 V
DRV
Supply voltage for internal gate driver
22 PWM PWM control input
ORDERING INFORMATION
PART NUMBER PACKAGE MARKING CODE
SiC530CD-T1-GE3 PowerPAK
®
MLP4535-22L SiC530 5 V PWM optimized
SiC530DB Reference board
1
2
3
4
5
ZCD_EN#
V
CIN
N.C.
BOOT
PHASE
16
15
14
13
12
V
SWH
V
SWH
V
SWH
V
SWH
V
SWH
11 10 9 8 7 6
17 18 19 20 21 22
P
GND
P
GND
P
GND
P
GND
P
GND
GL
V
DRV
PWM
P
GND
V
IN
V
IN
V
IN
P
GND
26
V
IN
25
C
GND
23
GL
24
SiC530
www.vishay.com
Vishay Siliconix
S15-2523-Rev. B, 02-Nov-15
3
Document Number: 62940
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PART MARKING INFORMATION
Fig. 3 - SiC530 Part Marking
Notes
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
(1)
The specification values indicated “AC” is V
SWH
to P
GND
, -8 V (< 20 ns, 10 μJ), min. and 32 V (< 50 ns), max.
(2)
The specification value indicates “AC voltage” is V
BOOT
to P
GND
, 40 V (< 50 ns) max.
(3)
The specification value indicates “AC voltage” is V
BOOT
to V
PHASE
, 8 V (< 50 ns) max.
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL PARAMETER CONDITIONS LIMIT UNIT
Input Voltage V
IN
-0.3 to +25
V
Control Logic Supply Voltage V
CIN
-0.3 to +7
Drive Supply Voltage V
DRV
-0.3 to +7
Switch Node (DC voltage)
V
SWH
-0.3 to +25
Switch Node (AC voltage)
(1)
-8 to +32
BOOT Voltage (DC voltage)
V
BOOT
32
BOOT Voltage (AC voltage)
(2)
40
BOOT to PHASE (DC voltage)
V
BOOT- PHASE
-0.3 to +7
BOOT to PHASE (AC voltage)
(3)
-0.3 to +8
All Logic Inputs and Outputs
(PWM and ZCD_EN#)
-0.3 to V
CIN
+ 0.3
Max. Operating Junction Temperature T
J
150
°CAmbient Temperature T
A
-40 to +125
Storage Temperature T
stg
-65 to +150
Electrostatic Discharge Protection
Human body model, JESD22-A114 2000
V
Charged device model, JESD22-C101 1000
RECOMMENDED OPERATING RANGE
ELECTRICAL PARAMETER MINIMUM TYPICAL MAXIMUM UNIT
Input Voltage (V
IN
)4.5-20
V
Drive Supply Voltage (V
DRV
) 4.555.5
Control Logic Supply Voltage (V
CIN
) 4.555.5
BOOT to PHASE (V
BOOT-PHASE
, DC voltage) 4 4.5 5.5
Thermal Resistance from Junction to PCB - 5 -
°C/W
Thermal Resistance from Junction to Case - 2.5 -
= Pin 1 Indicator
P/N = Part Number Code
= Siliconix Logo
= ESD Symbol
F = Assembly Factory Code
Y = Year Code
WW = Week Code
LL = Lot Code
F Y W W
P/N
LL

SIC530CD-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Gate Drivers 30A DrMOS VRPower
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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