Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC converters Switched-mode power supplies
1.4 Quick reference data
PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 20 December 2010 Product data sheet
DPAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
25 °C; T
j
175 °C - - 200 V
I
D
drain current T
mb
=2C; V
GS
=10V --20A
P
tot
total power
dissipation
T
mb
=25°C --150W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
=2C
-120130m
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=20A;
V
DS
= 160 V; T
j
=2C
-22-nC
PSMN130-200D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 20 December 2010 2 of 12
NXP Semiconductors
PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT428 (DPAK)
2 D drain
[1]
3Ssource
mb D mounting base; connected to
drain
3
2
mb
1
S
D
G
mbb076
Table 3. Ordering information
Type number Package
Name Description Version
PSMN130-200D DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428

PSMN130-200D,118

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET N-CH TRENCH 200V 20A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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