PSMN130-200D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 20 December 2010 6 of 12
NXP Semiconductors
PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
T
j
= 25 °C T
j
= 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
V
DS
> I
D
x R
DSon
V
DS
> I
D
x R
DSon
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 9. Forward transconductance as a function of
drain current; typical values
I
D
= 1 mA; V
DS
= V
GS
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 11. Gate-source threshold voltage as a function of
junction temperature
8
12
4
16
20
l
D
(A)
0
V
DS
(V)
021.60.8 1.20.4
014aab268
8
5.2
5.4
5
4.8
4.4
4.6
V
GS
(V) = 10
6
0.1
0.2
0.3
R
DS(on)
(Ω)
0
I
D
(A)
02016684
014aab269
4.4 4.6 4.8
5.2
5
5.4
6
8
V
GS
(V) = 10
014aab270
V
GS
(V)
0642
8
12
4
16
20
I
D
(A)
0
T
j
= 25 °C
T
j
= 175 °C
10
20
30
g
fs
(S)
0
I
D
(A)
020168124
014aab271
T
j
= 175 °C
T
j
= 25 °C
1.3
2.1
2.9
a
0.5
014aab272
T
j
(°C)
−60 18010020
2
3
1
4
5
V
GS(th)
(V)
0
014aab273
T
j
(°C)
−60 18010020
maximum
minimum
typical
