M25P80 DC and AC parameters
43/52
Figure 22. Serial input timing
t
SE
(6)
Sector Erase cycle time 0.8 3 s
t
BE
(6)
Bulk Erase cycle time 10 20 s
1. Preliminary data.
2. t
CH
+ t
CL
must be greater than or equal to 1/ f
C
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
6. Typical values given for T
A
= 85 °C.
7. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Table 16. AC characteristics (25 MHz operation, Grade 3)
(1)
(continued)
Test conditions specified in Table 10 and Table 12
Symbol Alt. Parameter Min. Typ. Max. Unit
C
D
AI01447C
S
MSB IN
Q
tDVCH
High Impedance
LSB IN
tSLCH
tCHDX
tCHCL
tCLCH
tSHCH
tSHSL
tCHSHtCHSL
DC and AC parameters M25P80
44/52
Figure 23. Write Protect setup and hold timing during WRSR when SRWD = 1
Figure 24. Hold timing
C
D
S
Q
High Impedance
W
tWHSL
tSHWL
AI07439
C
Q
AI02032
S
D
HOLD
tCHHL
tHLCH
tHHCH
tCHHH
tHHQXtHLQZ
M25P80 DC and AC parameters
45/52
Figure 25. Output timing
C
Q
AI01449e
S
LSB OUT
D
ADDR.
LSB IN
tSHQZ
tCH
tCL
tQLQH
tQHQL
tCLQX
tCLQV
tCLQX
tCLQV

M25P80-VMW6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
NOR Flash 3.0V 8M (1Mx8)
Lifecycle:
New from this manufacturer.
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