4
Sheet No.: D2-A09201EN
PC4D10SNIP0F Series
■
Electro-optical Characteristics
■
Absolute Maximum Ratings
(T
a
=
25˚C)
Parameter Symbol Rating Unit
Input
*1
Forward current I
F
20 mA
Reverse voltage V
R
5V
Power dissipation P
1
40 mW
Output
Supply voltage V
CC
7V
Output collector voltage
V
O
7V
Output collector
current I
O
50 mA
*1
Output collector power dissipation
P
C
60 mW
Operating temperature T
opr
−
40 to
+
85 ̊C
Storage temperature T
stg
−
55 to
+
125 ̊C
*2
Isolation voltage V
iso(rms)
3.75 kV
*3
Soldering temperature T
sol
270 ̊C
*1 No delating required up to 85˚C
*2 40 to 60%RH, AC for 1minute, f
=
60Hz
*3 For 10s
(Unless otherwise specifi ed T
a
=−
40 to 85˚C)
Parameter Symbol Condition MIN. TYP.
*4
MAX. Unit
Input
Forward voltage V
F
T
a
=
25˚C, I
F
=
10mA 1.4 1.5 1.75
V
I
F
=
10mA 1.3
−
1.8
Reverse current I
R
T
a
=
25̊C, V
R
=
5V
−−
10
μ
A
Terminal capacitance C
t
Ta
=
25̊C, V
=
0, f
=
1MHz
−
60 150 pF
*5
Output
Low level output voltage V
OL
I
OL
=
13mA, V
CC
=
5.5V, V
E
=
2V, I
F
=
5mA
−
0.4 0.6 V
High level output current I
OH
V
CC
=
V
O
=
5.5V, I
F
=
250
μ
A
−
0.02 100
μ
A
Low level supply current I
CCL
V
CC
=
5.5V, I
F
=
10mA
−
13 21 mA
High level supply current I
CCH
V
CC
=
5.5V, I
F
=
0
−
10 15 mA
*5
Transfer characteristics
"High
→
Low" input threshold current I
FHL
V
CC
=
5V, V
O
=
0.6V, R
L
=
350
Ω−
2.5 5 mA
Isolation resistance R
ISO
T
a
=
25̊C, DC500V, 40 to 60%RH 5×10
10
10
11
−Ω
Floating capacitance C
f
T
a
=
25̊C, V
=
0, f
=
1MHz
−
0.6
−
pF
Response time
"High
→
Low"
propagation delay time
t
PHL
V
CC
=
5V, I
F
=
7.5mA,
R
L
=
350W, C
L
=
15pF
−−
100 ns
T
a
=
25˚C254875ns
"Low
→
High"
propagation delay time
t
PLH
−−
100 ns
T
a
=
25˚C255075ns
*6
Distortion of pulse width
Δ
t
W
−
3.5 35 ns
Rise time t
r
−
20
−
ns
Fall time t
f
−
10
−
ns
Propagation delay skew t
PSK
−−
40 ns
Instantaneous common mode rejection
voltage (High level output)
CM
H
I
F
=
0,
V
O(Min)
=
2V,
T
a
=
25̊C, V
CC
=
5V,
V
CM
=
1kV
(P-P)
,
R
L
=
350
Ω
10 20
−
kV/
μ
s
Instantaneous common mode rejection
voltage (Low level output)
CM
L
I
F
=
7.5mA,
V
O(MAX)
=
0.8V
−
10
−
20
−
kV/
μ
s
*4 All typical values at V
CC
=
5V, T
a
=
25˚C
*5 It shall connect a by-pass capacitor of 0.01
μ
F or more between V
CC
(pin
➇
) and GND (pin
➄
) near the device, when it measures the transfer characteristics and the output side
characteristics
*6 Distortion of pulse width
Δ
tw
=
| t
PHL
−
t
PLH
|
