1. Product profile
1.1 General description
The BGU7003W MMIC is a wideband amplifier in SiGe:C technology for high speed,
low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT886
package.
[1] I
CC(tot)
= I
CC
+ I
RF_OUT
+ I
R_BIAS
.
[2] The third order intercept point is measured at 30 dBm per tone at RF_IN (f
1
= 100 MHz; f
2
= 100.2 MHz)
1.2 Features and benefits
Low noise high gain microwave MMIC
Applicable between 40 MHz and 6 GHz
Integrated temperature stabilized bias for easy design
Bias current configurable with external resistor
110 GHz transit frequency - SiGe:C technology
Power-down mode current consumption < 1 A
ESD protection > 1 kV Human Body Model (HBM) on all pins
1.3 Applications
GPS
FM LNA
Low-noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog / digital cordless applications
BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
Rev. 2 — 11 April 2013 Product data sheet
Table 1. Application information
T
amb
= 25
C; V
CC
= 2.85 V; I
CC(tot)
= 3.2 mA
[1]
; V
ENABLE
0.7 V; f = 100 MHz; Z
S
= Z
L
= 50
unless
otherwise specified. All measurements are done with the SMA-connectors as reference plane.
Application NF s
21
2
RL
in
RL
out
P
i(1dB)
P
L(1dB)
IP3
I
IP3
O
(dB) (dB) (dB) (dB) (dBm) (dBm) (dBm) (dBm)
high-ohmic FM LNA 1.2 13 0.5 16.5 23 11 15
[2]
2
[2]
BGU7003W All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 11 April 2013 2 of 14
NXP Semiconductors
BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
[1] T
sp
is the temperature at the solder point of the ground lead.
6. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1R_BIAS
2RF_IN
3GND
4RF_OUT
5 ENABLE
6V
CC
Transparent
top view
456
321
sym128
5 6
13
42
Table 3. Ordering information
Type number Package
Name Description Version
BGU7003W XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body 1 1.45 0.5 mm
SOT886
Table 4. Marking codes
Type number Marking code
BGU7003W UW
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled - 3.0 V
I
CC(tot)
total supply current configurable with external resistor - 25 mA
P
tot
total power dissipation T
sp
103 C
[1]
-70mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 235 K/W
BGU7003W All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 11 April 2013 3 of 14
NXP Semiconductors
BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
7. Characteristics
[1] I
CC(tot)
= I
CC
+ I
RF_OUT
+ I
R_BIAS
.
[2] Guaranteed by design and characterization.
Table 7. Characteristics
T
amb
=25
C; V
CC
= 2.5 V; I
CC(tot)
= 5.0 mA; V
ENABLE
0.7 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage RF input AC coupled 2.2 - 2.85 V
I
CC(tot)
total supply current configurable with
external resistor
[1]
3- 15mA
V
ENABLE
0.4 V
[1]
- - 0.001 mA
T
amb
ambient temperature 40 +25 +85 C
s
21
2
insertion power gain T
amb
= 25 C
f = 100 MHz
[2]
21.0 22.5 - dB
f = 900 MHz
[2]
18.5 20.0 - dB
f = 1.575 GHz 16.0 17.5 - dB
f = 2.4 GHz
[2]
14.0 15.2 - dB
f = 5.8 GHz
[2]
10.0 11.4 - dB
40 C T
amb
+85 C
f = 100 MHz
[2]
20.0 22.5 - dB
f = 900 MHz
[2]
17.5 20.0 - dB
f = 1.575 GHz
[2]
15.0 17.5 - dB
f = 2.4 GHz
[2]
13.0 15.2 - dB
f = 5.8 GHz
[2]
9.0 11.4 - dB
MSG maximum stable gain f = 100 MHz - 33.8 - dB
f = 900 MHz - 23.8 - dB
f = 1.575 GHz - 20.5 - dB
f = 2.4 GHz - 17.8 - dB
f = 5.8 GHz - 15.4 - dB
NF
min
minimum noise figure f = 100 MHz - 0.6 - dB
f = 900 MHz - 0.6 - dB
f = 1.575 GHz - 0.7 - dB
f = 2.4 GHz - 0.8 - dB
f = 5.8 GHz - 1.5 - dB
Table 8. ENABLE (pin 5)
40
C
T
amb
+85
C
V
ENABLE
(V) State
0.4 OFF
0.7 ON

BGU7003W,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier Wideband silicon low noise amp MMIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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